Comment on ‘‘Temperature dependence of the barrier height of metal–semiconductor contacts on 6H‐SiC’’ [J. Appl. Phys.79, 301 (1996)]

1996 ◽  
Vol 80 (11) ◽  
pp. 6570-6571 ◽  
Author(s):  
C. Fröjdh ◽  
C. S. Petersson
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
Semiconductor Contacts

Temperature Dependence of Metal-Semiconductor Contacts on 6H-SiC.

1995 ◽  
Vol 378 ◽  
Author(s):  
S.R. Smith ◽  
A.O. Evwaraye ◽  
W.C. Mitchel
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
Semiconductor Contacts ◽  
Standard Models ◽  
P Type

AbstractWe have examined the temperature dependence of the barrier height of Au, Ag, Ni, and Al, metal-semiconductor contacts on n-type 6H-SiC, and Al metal-semiconductor contacts on p-type 6H-SiC. The barrier height was determined from the (1/C2) vs VR characteristics of the contacts at temperatures ranging from 300K to 670K. The measurements were made at 1 MHz. These measurements were compared to I-V measurements at various temperatures, and to the behavior predicted by standard models.

Temperature dependence of the barrier height of metal‐semiconductor contacts on 6H‐SiC

1996 ◽  
Vol 79 (1) ◽  
pp. 301-304 ◽  
Author(s):  
S. R. Smith ◽  
A. O. Evwaraye ◽  
W. C. Mitchel
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
Semiconductor Contacts

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Contacts ◽  
Electrical Behavior ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.

Temperature Dependence of Barrier Height and Energy Bandgap in Au/n-GaSb Schottky Diode

2000 ◽  
Vol 39 (Part 2, No. 5A) ◽  
pp. L400-L401 ◽  
Author(s):  
Chuing-Liang Lin ◽  
Yan-Kuin Su ◽  
Jia-Rong Chang ◽  
Shi-Ming Chen ◽  
Wen-Liang Li ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
Schottky Diode ◽  
Energy Bandgap

Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors

2018 ◽  
Vol 924 ◽  
pp. 473-476
Author(s):  
Patrick Fiorenza ◽  
Marilena Vivona ◽  
Ferdinando Iucolano ◽  
Andrea Severino ◽  
Simona Lorenti ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Barrier Height ◽  
Conduction Band ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Semiconductor Interface ◽  
Tunneling Model ◽  
Mos Capacitors ◽  
Gate Current

We present a temperature-dependence electrical characterization of the oxide/semiconductor interface in MOS capacitors with a SiO2layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors. The post deposition annealing process in N2O allowed to achieve an interface state density Dit 9.0×1011cm-2eV-1below the conduction band edge. At room temperature, an electron barrier height (conduction band offset) of 2.8 eV was measured using the standard Fowler-Nordheim tunneling model. The electron conduction through the SiO2insulating layer was evaluated by studying the experimental temperature dependence of the gate current. In particular, the Fowler-Nordheim electron barrier height showed a negative temperature coefficient (dφB/dT= - 0.98 meV/°C), which is very close to the expected value for an ideal SiO2/4H-SiC system. This result, obtained for deposited SiO2layers, is an improvement compared to the values of the temperature coefficient of the Fowler-Nordheim electron barrier height reported for thermally grown SiO2. In fact, the smaller dependence ofφBon the temperature observed in this work represents a clear advantage of our deposited SiO2for the operation of MOSFET devices at high temperatures.

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