A hybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density hydrogen plasma modification

2011 ◽  
Vol 99 (9) ◽  
pp. 091101 ◽  
Author(s):  
W. D. Hu ◽  
X. S. Chen ◽  
Z. H. Ye ◽  
W. Lu
Keyword(s):  
Surface Passivation ◽  
Hydrogen Plasma ◽  
Infrared Detector ◽  
High Density ◽  
Plasma Modification ◽  
Long Wave ◽  
Long Wave Infrared

Highly selective two-color mid-wave and long-wave infrared detector hybrid based on Type-II superlattices

2012 ◽  
Vol 37 (22) ◽  
pp. 4744 ◽  
Author(s):  
Edward Kwei-wei Huang ◽  
Minh-Anh Hoang ◽  
Guanxi Chen ◽  
Shaban Ramezani-Darvish ◽  
Abbas Haddadi ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Type Ii ◽  
Long Wave ◽  
Type Ii Superlattices ◽  
Long Wave Infrared

scholarly journals Polarization insensitive, metamaterial absorber-enhanced long-wave infrared detector

2020 ◽  
Vol 28 (20) ◽  
pp. 28843 ◽  
Author(s):  
Chunxu Chen ◽  
Yuwei Huang ◽  
Ke Wu ◽  
Thomas G. Bifano ◽  
Stephan W. Anderson ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Metamaterial Absorber ◽  
Long Wave ◽  
Polarization Insensitive ◽  
Long Wave Infrared

High Performance HgCdTe-Detectors Grown by Molecular Beam Epitaxy

1996 ◽  
Vol 450 ◽  
Author(s):  
R. D. Rajavel ◽  
D. M. Jamba ◽  
J. E. Jensen ◽  
O. K. Wu ◽  
C. A. Cockrum ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
Simultaneous Detection ◽  
Focal Plane Arrays ◽  
Long Wave ◽  
Sharp Turn ◽  
Midwave Infrared ◽  
Long Wave Infrared

ABSTRACTMolecular beam epitaxy (MBE) offers benefits such as the capability for growth of compositionally-tailored heterostructures and in-situ doping of HgCdTe alloys. These capabilities were applied to the growth of long wave infrared unispectral focal plane arrays (FPA) with 480×4 elements. The detectivity (D*) map of the FPA demonstrated performance that was higher than the specification value, with no defective channels. Two-color detectors with the n-p-n architecture, for the simultaneous detection of two closely spaced bands in the midwave infrared spectrum were also grown by MBE. These devices exhibited sharp turn-off and turn-on in both bands. The quantum efficiency was greater than 70% and average R°A values exceeded 1×106 Ω-cm2 in both bands. These result demonstrate that high performance HgCdTe devices can be grown by MBE.

scholarly journals Room-temperature long-wave infrared detector with thin double layers of amorphous germanium and amorphous silicon

2019 ◽  
Vol 27 (25) ◽  
pp. 37056
Author(s):  
Jiayun Zhou ◽  
Mohammad Abu Raihan Miah ◽  
Yugang Yu ◽  
Alex Ce Zhang ◽  
Zijian Zeng ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Infrared Detector ◽  
Double Layers ◽  
Amorphous Germanium ◽  
Long Wave ◽  
Long Wave Infrared

Development of a long wave infrared detector for SGLI instrument

2007 ◽  
Author(s):  
Aurélien Dariel ◽  
P. Chorier ◽  
N. Reeb ◽  
B. Terrier ◽  
M. Vuillermet ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Long Wave ◽  
Long Wave Infrared

320 x 256 complementary barrier infrared detector focal plane array for long-wave infrared imaging

2012 ◽  
Author(s):  
Jean Nguyen ◽  
Sir B. Rafol ◽  
Alexander Soibel ◽  
Arezou Khoskhlagh ◽  
David Z.-Y. Ting ◽  
...  
Keyword(s):  
Focal Plane ◽  
Infrared Imaging ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Long Wave ◽  
Long Wave Infrared
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