Monte Carlo study of electron transport in III–V heterostructures with doped quantum wells

1996 ◽  
Vol 80 (2) ◽  
pp. 928-935 ◽  
Author(s):  
J. L. Thobel ◽  
A. Sleiman ◽  
P. Bourel ◽  
F. Dessenne ◽  
L. Baudry
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Quantum Wells ◽  
Monte Carlo Study

Monte Carlo Study of Hot Electron Transport in Quantum Wells

1988 ◽  
Vol 27 (Part 1, No. 7) ◽  
pp. 1363-1363 ◽  
Author(s):  
Hiroyoshi Tanimoto ◽  
Naoki Yasuda ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Quantum Wells ◽  
Monte Carlo Study ◽  
Hot Electron ◽  
Hot Electron Transport

Monte Carlo Study of Hot Electron Transport in Quantum Wells

1988 ◽  
Vol 27 (Part 1, No. 4) ◽  
pp. 563-571 ◽  
Author(s):  
Hiroyoshi Tanimoto ◽  
Naoki Yasuda ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Quantum Wells ◽  
Monte Carlo Study ◽  
Hot Electron ◽  
Hot Electron Transport

A Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs

1988 ◽  
Vol 53 (22) ◽  
pp. 2205-2207 ◽  
Author(s):  
K. Sadra ◽  
C. M. Maziar ◽  
B. G. Streetman ◽  
D. S. Tang
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Monte Carlo Study ◽  
Electron Hole

A Monte-Carlo study of sub-keV electron transport in water: the influence of the condensed phase

2005 ◽  
Vol 228 (1-4) ◽  
pp. 341-348 ◽  
Author(s):  
D. Emfietzoglou ◽  
G. Papamichael ◽  
I. Androulidakis ◽  
K. Karava ◽  
K. Kostarelos ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Condensed Phase ◽  
Monte Carlo Study

Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells

1998 ◽  
Vol 13 (1) ◽  
pp. 43-53 ◽  
Author(s):  
J R Watling ◽  
Alison B Walker ◽  
J J Harris ◽  
J M Roberts
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
Quantum Wells

scholarly journals A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 213-216
Author(s):  
Mahbub Rashed ◽  
W.-K. Shih ◽  
S. Jallepalli ◽  
R. Zaman ◽  
T. J. T. Kwan ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
High Field ◽  
Room Temperature ◽  
Monte Carlo Study ◽  
Strained Silicon ◽  
Simulation Tool ◽  
Bulk Materials ◽  
Strained Si ◽  
Mc Simulation

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.

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