Numerical investigation of one‐dimensional tunnel junction arrays at temperatures above the Coulomb blockade regime

1996 ◽  
Vol 80 (1) ◽  
pp. 256-263 ◽  
Author(s):  
K. P. Hirvi ◽  
M. A. Paalanen ◽  
J. P. Pekola
2015 ◽  
Vol 92 (4) ◽  
Author(s):  
Nicolas Vogt ◽  
Roland Schäfer ◽  
Hannes Rotzinger ◽  
Wanyin Cui ◽  
Andreas Fiebig ◽  
...  

1997 ◽  
Vol 108 (1-2) ◽  
pp. 191-215 ◽  
Author(s):  
Sh. Farhangfar ◽  
K. P. Hirvi ◽  
J. P. Kauppinen ◽  
J. P. Pekola ◽  
J. J. Toppari ◽  
...  

2004 ◽  
Vol 18 (10n11) ◽  
pp. 1457-1464
Author(s):  
MINCHEOL SHIN

We have studied the ohmic property of parallel coupled single-electron tunnel-junction arrays. When a current flows in one array ('driving' array), the Coulomb blockade state of the other array ('passive' array) is lifted, leading to an ohmic relationship between the tunneling current and the bias voltage. The driving current basically plays the role of a switch for the current in the passive array, as it can vary the ohmic conductance as well. Since the ohmic characteristic and the switching function are quite robust to the background or stray charges, the parallel coupled tunnel-junction system can be used as a variable resistor in logic circuits. As its specific application, we have proposed a Hopfield neural network with single-electron synapses.


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