In-plane and growth direction electron cyclotron effective mass in short period InAs/GaSb semiconductor superlattices

2011 ◽  
Vol 110 (4) ◽  
pp. 043720 ◽  
Author(s):  
S. Suchalkin ◽  
G. Belenky ◽  
S. P. Svensson ◽  
B. Laikhtman ◽  
D. Smirnov ◽  
...  
Keyword(s):  
Effective Mass ◽  
Growth Direction ◽  
Electron Cyclotron ◽  
Semiconductor Superlattices ◽  
Short Period

Measurement of the effective mass along the growth direction of a thin-barrier GaAs-AlAs superlattice

1990 ◽  
Vol 229 (1-3) ◽  
pp. 493-495 ◽  
Author(s):  
G. Brozak ◽  
F. DeRosa ◽  
D.M. Hwang ◽  
P. Miceli ◽  
S.A. Schwarz ◽  
...  
Keyword(s):  
Effective Mass ◽  
Growth Direction ◽  
Thin Barrier

Carrier Pocket Engineering to Design Superior Thermoelectric Materials Using GaAs/AlAs Superlattices

1998 ◽  
Vol 545 ◽  
Author(s):  
T. Koga ◽  
X. Sun ◽  
S. B. Cronin ◽  
M. S. Dresselhaus
Keyword(s):  
Quantum Wells ◽  
Figure Of Merit ◽  
Growth Direction ◽  
Present Calculation ◽  
High Symmetry ◽  
Thermoelectric Figure ◽  
Bulk Gaas ◽  
Basic Model ◽  
Short Period ◽  
Superlattice Period

AbstractA large enhancement in the thermoelectric figure of merit for the whole superlattice, Z3DT, is predicted for short period GaAs/AlAs superlattices relative to bulk GaAs. Various superlattice parameters (superlattice growth direction, superlattice period and layer thicknesses) are explored to optimize Z3DT, including quantum wells formed at various high symmetry points in the Brillouin zone. The highest room temperature Z3DT obtained in the present calculation is 0.41 at the optimum carrier concentration for either (001) or (111) oriented GaAs(20 Å)/AIAs(20 Å) superlattices, which is about 50 times greater than the corresponding ZT for bulk GaAs obtained using the same basic model.

Structural Characterization of Composition-Modulated ZnSel-xTex Epitaxial Films

1995 ◽  
Vol 417 ◽  
Author(s):  
S. P. Ahrenkiel ◽  
M. H. Bode ◽  
M. M. Al-Jassim ◽  
H. Luo ◽  
S. H. Xin ◽  
...  
Keyword(s):  
Cross Sections ◽  
Small Amplitude ◽  
Molecular Beam ◽  
Growth Direction ◽  
Epitaxial Films ◽  
Modulation Amplitude ◽  
Transmission Electron ◽  
Short Period ◽  
Strain Modulation

AbstractWe examine the microstructure of short-period (14–31 Å) composition modulations in epitaxial ZnSel-xTex ([email protected]) films grown by molecular-beam epitaxy (MBE) on vicinal (001) GaAs. Transmission electron microscope (TEM) images of cross-sections reveal highly-periodic contrast along the growth direction throughout the full thicknesses of the films (over 2 μm) that corresponds to a nearly sinusoidal variation between Se- and Te-rich compositions. Growth of ZnSe1-xTex at 285°C on substrates tilted 4° toward [1111 maximizes the strength and regularity of the modulation. Using dynamical electron-diffraction simulations, we estimate a modulation amplitude of [email protected](7) in a sample showing strong modulation. We assume a small amplitude of strain modulation to fit the experimental data.

Electron cyclotron effective mass in indium nitride

2010 ◽  
Vol 96 (5) ◽  
pp. 052117 ◽  
Author(s):  
Michel Goiran ◽  
Marius Millot ◽  
Jean-Marie Poumirol ◽  
Iulian Gherasoiu ◽  
Wladek Walukiewicz ◽  
...  
Keyword(s):  
Effective Mass ◽  
Indium Nitride ◽  
Electron Cyclotron

Cyclotron effective mass and Landé g factor in GaAs–Ga1−xAlxAs quantum wells under growth-direction applied magnetic fields

2006 ◽  
Vol 99 (10) ◽  
pp. 104303 ◽  
Author(s):  
M. de Dios-Leyva ◽  
N. Porras-Montenegro ◽  
H. S. Brandi ◽  
L. E. Oliveira
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Effective Mass ◽  
Growth Direction ◽  
G Factor

Enhanced Band-Gap Luminescence in Strain-Symmetrized (Si)m(Ge)n Superlattices

1993 ◽  
Vol 298 ◽  
Author(s):  
U. Menczigar ◽  
G. Abstreiter ◽  
H. Kibbel ◽  
H. Presting ◽  
E. Kasper
Keyword(s):  
Raman Spectroscopy ◽  
Dislocation Density ◽  
Band Gap ◽  
Effective Mass ◽  
Reference Sample ◽  
Buffer Layers ◽  
Luminescence Efficiency ◽  
Short Period ◽  
Theoretical Predictions

AbstractWe report on band-gap luminescence in short period, strain symmetrized (Si)m(Ge)n superlattices grown on relaxed, step-graded Sil-xGex alloy buffer layers. The dislocation density in the superlattices, which were grown at 500°C using Sb as a surfactant, is reduced by 2-3 orders of magnitude compared with superlattices grown on thin, partly relaxed Sil-xGex buffer layers. Due to the improved quality of the superlattices, well defined band-gap luminescence could be observed which is for a (Si)6(Ge)4 superlattice strongly enhanced compared with a Si0.6Ge0.4 alloy reference sample. The measured band-gap energies compare well with theoretical predictions. To study the influence of interdiffusion of the Si- and Gelayers on the band-gap of the superlattices, the samples were annealed and studied with photoluminescence and Raman spectroscopy. An increasing band-gap and a decreasing luminescence efficiency was found with increasing intermixing of the layers. These experimental results are well described with an interdiffuision model of the layers in conjunction with an effective mass calculation.

Pressure dependence of the electron cyclotron effective mass in potassium

1985 ◽  
Vol 15 (4) ◽  
pp. 859-867 ◽  
Author(s):  
A A A El-Rahman ◽  
M Elliott ◽  
W R Datars
Keyword(s):  
Effective Mass ◽  
Pressure Dependence ◽  
Electron Cyclotron
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