Influence of magnetic quantization on the effective mass in semiconductor superlattices

1986 ◽  
Vol 36 (12) ◽  
pp. 1389-1395 ◽  
Author(s):  
M. Mondal ◽  
K. P. Ghatak
Keyword(s):  
Effective Mass ◽  
Semiconductor Superlattices ◽  
Magnetic Quantization

In-plane and growth direction electron cyclotron effective mass in short period InAs/GaSb semiconductor superlattices

2011 ◽  
Vol 110 (4) ◽  
pp. 043720 ◽  
Author(s):  
S. Suchalkin ◽  
G. Belenky ◽  
S. P. Svensson ◽  
B. Laikhtman ◽  
D. Smirnov ◽  
...  
Keyword(s):  
Effective Mass ◽  
Growth Direction ◽  
Electron Cyclotron ◽  
Semiconductor Superlattices ◽  
Short Period

Electron drift reversal caused by remaining holes in semiconductor superlattices due to effective-mass filtering

1996 ◽  
Vol 53 (20) ◽  
pp. R13283-R13286 ◽  
Author(s):  
M. Hosoda ◽  
K. Tominaga ◽  
P. O. Vaccaro ◽  
T. Watanabe
Keyword(s):  
Effective Mass ◽  
Electron Drift ◽  
Semiconductor Superlattices

scholarly journals Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

2011 ◽  
Vol 2 ◽  
pp. 339-362 ◽  
Author(s):  
Debashis De ◽  
Sitangshu Bhattacharya ◽  
S M Adhikari ◽  
A Kumar ◽  
P K Bose ◽  
...  
Keyword(s):  
Light Intensity ◽  
Effective Mass ◽  
Quantum Wires ◽  
Strong Dependence ◽  
Energy Spectra ◽  
Optoelectronic Materials ◽  
Magnetic Quantization ◽  
Light Waves ◽  
Carrier Energy ◽  
Low Dimensional

The photoemission from quantum wires and dots of effective mass superlattices of optoelectronic materials was investigated on the basis of newly formulated electron energy spectra, in the presence of external light waves, which controls the transport properties of ultra-small electronic devices under intense radiation. The effect of magnetic quantization on the photoemission from the aforementioned superlattices, together with quantum well superlattices under magnetic quantization, has also been investigated in this regard. It appears, taking HgTe/Hg1− x Cd x Te and In x Ga1− x As/InP effective mass superlattices, that the photoemission from these quantized structures is enhanced with increasing photon energy in quantized steps and shows oscillatory dependences with the increasing carrier concentration. In addition, the photoemission decreases with increasing light intensity and wavelength as well as with increasing thickness exhibiting oscillatory spikes. The strong dependence of the photoemission on the light intensity reflects the direct signature of light waves on the carrier energy spectra. The content of this paper finds six different applications in the fields of low dimensional systems in general.

RAMAN PROBING OF PHONONS AND INTERFACES IN SEMICONDUCTOR SUPERLATTICES

1984 ◽  
Vol 45 (C5) ◽  
pp. C5-131-C5-137 ◽  
Author(s):  
M. V. Klein ◽  
C. Colvard ◽  
R. Fischer ◽  
H . Morkoç
Keyword(s):  
Semiconductor Superlattices
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