The effect of the trap density and depth on the current bistability in organic bistable devices

2011 ◽  
Vol 110 (4) ◽  
pp. 043721 ◽  
Author(s):  
Jae Hun Jung ◽  
Tae Whan Kim
2011 ◽  
Vol 11 (2) ◽  
pp. e40-e43 ◽  
Author(s):  
Chan Ho You ◽  
Jae Hun Jung ◽  
Jin Ku Kwak ◽  
Tae Whan Kim

Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.


2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  

2014 ◽  
Vol 115 (21) ◽  
pp. 214501 ◽  
Author(s):  
Mohammed Benwadih ◽  
J. A. Chroboczek ◽  
Gérard Ghibaudo ◽  
Romain Coppard ◽  
Dominique Vuillaume

2021 ◽  
pp. 2008134
Author(s):  
Yihang Zhang ◽  
Guilong Cai ◽  
Yawen Li ◽  
Zhenzhen Zhang ◽  
Tengfei Li ◽  
...  

2007 ◽  
Vol 28 (5) ◽  
pp. 432-435 ◽  
Author(s):  
Chun-Yuan Lu ◽  
Kuei-Shu Chang-Liao ◽  
Chun-Chang Lu ◽  
Ping-Hung Tsai ◽  
Tien-Ko Wang

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