Dependence of current bistabilities on trap density and maximum applied voltage in organic bistable devices

2010 ◽  
Vol 10 (1) ◽  
pp. e42-e45
Author(s):  
Jae Hun Jung ◽  
Tae Whan Kim
Keyword(s):  
Applied Voltage ◽  
Trap Density ◽  
Organic Bistable Devices

Dependence of the trap density and the distribution on the current bistability in organic bistable devices

2011 ◽  
Vol 11 (2) ◽  
pp. e40-e43 ◽  
Author(s):  
Chan Ho You ◽  
Jae Hun Jung ◽  
Jin Ku Kwak ◽  
Tae Whan Kim
Keyword(s):  
Trap Density ◽  
Organic Bistable Devices

FIM OBSERVATION ON THE REACTION OF METALS ( W, Mo ) WITH n-OCTANOL UNDER AN APPLIED VOLTAGE

1987 ◽  
Vol 48 (C6) ◽  
pp. C6-499-C6-504 ◽  
Author(s):  
T. Terao ◽  
F. Iwatsu ◽  
H. Morikawa ◽  
Y. Yashiro
Keyword(s):  
Applied Voltage

PARAMETRIC MODEL OF RESISTANCE OF PLASMA-EROSIVE LOAD, ADEQUATE IN THE WIDE RANGE OF CHANGE OF APPLIED VOLTAGE

2017 ◽  
Vol 2017 (3) ◽  
pp. 3-12 ◽  
Author(s):  
N.A. Shydlovska ◽  
◽  
S.M. Zakharchenko ◽  
O.P. Cherkaskyi ◽  
◽  
...  
Keyword(s):  
Applied Voltage ◽  
Parametric Model ◽  
Wide Range

The Influence of Barrier and Applied Voltage Parameters on the Impulse Surface Discharge Characteristics

2020 ◽  
Vol 11 (11) ◽  
pp. 17-27
Author(s):  
Vadim V. VOEVODIN ◽  
◽  
Marina V. SOKOLOVA ◽  
Viktor R. SOLOV’YEV ◽  
Nikolay Yu. LYSOV ◽  
...  
Keyword(s):  
Applied Voltage ◽  
Voltage Pulse ◽  
Discharge Zone ◽  
Surface Discharge ◽  
Initial Surface ◽  
Barrier Material ◽  
Dielectric Barrier ◽  
Discharge Ignition ◽  
Study Results ◽  
Wide Range

The results from an experimental study of impulse surface discharge occurring in an electrode system containing a dielectric plate are presented. On one of its sides, the plate had a corona-producing electrode made of 50 mm thick copper foil grounded through a current shunt for measuring the discharge current. On its other side, the plate had a high-voltage electrode, to which the voltage from a pulse generator was applied. The article presents the results from measurements of the initial voltage and the sizes of the surface discharge area in air when applying single voltage pulses with different pulse front steepness in the range 0,1–3,4 kV/ms and amplitude in the range 7–15 kV. The measurements were carried out for different dielectric barrier materials with the e values from 2 to 35. The dielectric barrier thickness was 0,9–1,8 mm. The study results have shown that the initial surface discharge ignition voltage depends essentially on the voltage pulse parameters, whereas the barrier characteristics have a weaker effect on this voltage. It has been determined that the discharge has different discharge zone length and different structure depending on the dielectric barrier properties and applied voltage parameters. The streamer zone sizes decrease with increasing the barrier material e value at the same voltage pulse steepness and increase with increasing the steepness for each barrier material. The data obtained for a wide range of external conditions can be used in numerical modeling of discharge.

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

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