Calculation of the wave‐vector‐dependent interband impact‐ionization transition rate in wurtzite and zinc‐blende phases of bulk GaN

1996 ◽  
Vol 79 (11) ◽  
pp. 8838-8840 ◽  
Author(s):  
Jan Kolnik ◽  
Ismail H. Oguzman ◽  
Kevin F. Brennan ◽  
R. Wang ◽  
P. Paul Ruden
Keyword(s):  
Wave Vector ◽  
Transition Rate ◽  
Impact Ionization ◽  
Zinc Blende ◽  
Bulk Gan

Theoretical Study of Electron Initiated Impact Ionization Rate in Bulk GaN using a Wave Vector Dependent Numerical Transition Rate Formulation

1995 ◽  
Vol 395 ◽  
Author(s):  
J. Kolnik ◽  
I.H. Oguzman ◽  
K.F. Brennan ◽  
R. Wang ◽  
P.P. Ruden
Keyword(s):  
Monte Carlo ◽  
Transition Rate ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Golden Rule ◽  
Ionization Rate ◽  
Ensemble Monte Carlo ◽  
Bulk Gan ◽  
Impact Ionization Rate ◽  
The Impact

ABSTRACTIn this paper, we present ensemble Monte Carlo based calculations of electron initiated impact ionization in bulk zincblende GaN using a wavevector dependent formulation of the interband impact ionization transition rate. These are the first reported estimates, either theoretical or experimental, of the impact ionization rates in GaN. The transition rate is determined from Fermi’s golden rule for a two-body screened Coulomb interaction using a numerically determined dielectric function as well as by numerically integrating over all of the possible final states. The Monte Carlo simulator includes the full details of the first four conduction bands derived from an empirical pseudopotential calculation as well as all of the relevant phonon scattering mechanisms. It is found that the ionization rate has a relatively "soft" threshold.

EXCITON INSULATOR STATES IN MATERIALS WITH ‘MEXICAN HAT’ BAND STRUCTURE DISPERSION AND IN GRAPHENE

2015 ◽  
Vol 11 (1) ◽  
pp. 2927-2949
Author(s):  
Lyubov E. Lokot
Keyword(s):  
Band Structure ◽  
Three Dimensional ◽  
Dimensional Sphere ◽  
Electron Hole ◽  
Dinger Equation ◽  
Fermi Sphere ◽  
Zinc Blende ◽  
Bulk Gan ◽  
Structure Dispersion ◽  
Excitonic States

In the paper a theoretical study the both the quantized energies of excitonic states and their wave functions in grapheneand in materials with "Mexican hat" band structure dispersion as well as in zinc-blende GaN is presented. An integral twodimensionalSchrödinger equation of the electron-hole pairing for a particles with electron-hole symmetry of reflection isexactly solved. The solutions of Schrödinger equation in momentum space in studied materials by projection the twodimensionalspace of momentum on the three-dimensional sphere are found exactly. We analytically solve an integral twodimensionalSchrödinger equation of the electron-hole pairing for particles with electron-hole symmetry of reflection. Instudied materials the electron-hole pairing leads to the exciton insulator states. Quantized spectral series and lightabsorption rates of the excitonic states which distribute in valence cone are found exactly. If the electron and hole areseparated, their energy is higher than if they are paired. The particle-hole symmetry of Dirac equation of layered materialsallows perfect pairing between electron Fermi sphere and hole Fermi sphere in the valence cone and conduction cone andhence driving the Cooper instability. The solutions of Coulomb problem of electron-hole pair does not depend from a widthof band gap of graphene. It means the absolute compliance with the cyclic geometry of diagrams at justification of theequation of motion for a microscopic dipole of graphene where >1 s r . The absorption spectrums for the zinc-blendeGaN/(Al,Ga)N quantum well as well as for the zinc-blende bulk GaN are presented. Comparison with availableexperimental data shows good agreement.

k dependence of the impact ionization transition rate in bulk InAs, GaAs, and Ge

1992 ◽  
Vol 71 (6) ◽  
pp. 2736-2740 ◽  
Author(s):  
Yang Wang ◽  
Kevin F. Brennan
Keyword(s):  
Transition Rate ◽  
Impact Ionization ◽  
The Impact

THEORETICAL STUDY OF UNIPOLAR INTERSUBBAND IMPACT IONIZATION IN QUANTUM DOT BASED PHOTODETECTORS

2013 ◽  
Vol 27 (29) ◽  
pp. 1350208 ◽  
Author(s):  
AMIR YUSEFLI ◽  
MAHDI ZAVVARI ◽  
KAMBIZ ABEDI
Keyword(s):  
Quantum Dot ◽  
Transition Rate ◽  
Theoretical Study ◽  
Impact Ionization ◽  
Photogenerated Electron ◽  
Ionization Rate ◽  
Rate Equations ◽  
Infrared Photodetector ◽  
Avalanche Gain ◽  
Carrier Scattering

In this paper, we study the intersubband impact ionization through conduction band states of quantum dot (QD) layers of an infrared photodetector. For this purpose, a photogenerated electron moving in high field active region of a p-i-n diode is assumed which can excite an electron from ground state of a QD by carrier–carrier scattering. The generated electron can escape the QD by tunneling and contribute in photocurrent giving avalanche gain to photodetector. The ionization rate and responsivity of detector are calculated from an analytical approach of intersubband transition rate equations. Results show increased responsivity in the order of several A/W.

A formalism for the indirect Auger effect. I

1976 ◽  
Vol 347 (1651) ◽  
pp. 547-564 ◽  
Keyword(s):  
Room Temperature ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Energy Gap ◽  
Electron Collision ◽  
Recombination Coefficient ◽  
Recombination Rates ◽  
Zinc Blende ◽  
Auger Effect ◽  
Ionization Rates

A general formalism has been developed for the calculation of band-band Auger recombination and impact ionization rates in diamond and zinc blende type structures. The energy gap involved in the transition must be of order 1eV or greater, at room temperature, for direct gaps but is arbi­trary for indirect gaps. A recombination coefficient of 28.1 x 10 -32 cm 6 s -1 for GaP (hole-hole-electron collision) has been obtained in reasonable agreement with experiment. The formalism gives better theoretical values for Ge and Si than so far available. This has tended to reduce the recombination rates expected theoretically.

scholarly journals Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

2018 ◽  
Vol 112 (26) ◽  
pp. 262103 ◽  
Author(s):  
Lina Cao ◽  
Jingshan Wang ◽  
Galen Harden ◽  
Hansheng Ye ◽  
Roy Stillwell ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Experimental Characterization ◽  
Bulk Gan ◽  
Ionization Coefficients

Piezoelectric Scattering in Large-Bandgap Semiconductors and Low-Dimensional Heterostructures

1999 ◽  
Vol 572 ◽  
Author(s):  
B. K. Ridley ◽  
N. A. Zakhleniuk ◽  
C. R. Bennett ◽  
M. Babiker ◽  
D. R. Anderson
Keyword(s):  
Quantum Wells ◽  
Electron Density ◽  
Piezoelectric Effect ◽  
Pauli Principle ◽  
High Electron ◽  
Zinc Blende ◽  
Bulk Gan ◽  
Bandgap Semiconductors ◽  
Low Dimensional ◽  
Very High

ABSTRACTWe develop a rigorous theory of piezoacoustic phonon limited electron transport in bulk GaN and GaN-based heterostructures. Within the Boltzmann equation approach we derive a new expression for the momentum relaxation rate and show that the Pauli principle restrictions are comparable in importance to a screening effect at temperatures up to 150 K provided that the electron density is large. This is of particular importance for electrons in GaN/AlN-based quantum wells where very high electron densities initiated by the piezoelectric effect have recently been reported. Variations of the piezoacoustic phonon limited electron mobility with the lattice temperature and with the electron density for a zinc-blende and wurtzite GaN are presented.

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