Schottky barrier impact-ionization metal-oxide-semiconductor device with reduced operating voltage

2011 ◽  
Vol 99 (8) ◽  
pp. 083507 ◽  
Author(s):  
Qianqian Huang ◽  
Ru Huang ◽  
Zhenhua Wang ◽  
Zhan Zhan ◽  
Yangyuan Wang
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Impact Ionization ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Operating Voltage

Influence of Epi-Layer Growth Pits on SiC Device Characteristics

2015 ◽  
Vol 821-823 ◽  
pp. 177-180 ◽  
Author(s):  
Chiaki Kudou ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Johji Nishio ◽  
Keiko Masumoto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dielectric Breakdown ◽  
Layer Growth ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Constant Current ◽  
Schottky Barrier Diodes ◽  
Current Time

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications

2006 ◽  
Vol 88 (15) ◽  
pp. 152101 ◽  
Author(s):  
D. Q. Kelly ◽  
I. Wiedmann ◽  
J. P. Donnelly ◽  
S. V. Joshi ◽  
S. Dey ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Device Applications

scholarly journals Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device

2004 ◽  
Vol 85 (16) ◽  
pp. 3387-3389 ◽  
Author(s):  
J. M. Sun ◽  
W. Skorupa ◽  
T. Dekorsy ◽  
M. Helm ◽  
L. Rebohle ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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