Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

2011 ◽  
Vol 99 (7) ◽  
pp. 073108 ◽  
Author(s):  
Wei-Ting Hsu ◽  
Yu-An Liao ◽  
Feng-Chang Hsu ◽  
Pei-Chin Chiu ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Layer Thickness ◽  
Inas Quantum Dots ◽  
Capping Layer

Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer

2005 ◽  
Vol 81 (4) ◽  
pp. 813-816 ◽  
Author(s):  
B. Ilahi ◽  
L. Sfaxi ◽  
F. Hassen ◽  
H. Maaref ◽  
B. Salem ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Room Temperature ◽  
Inas Quantum Dots ◽  
Capping Layer

Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

2009 ◽  
Vol 46 (1-2) ◽  
pp. 324-327 ◽  
Author(s):  
P. Hazdra ◽  
J. Oswald ◽  
V. Komarnitskyy ◽  
K. Kuldová ◽  
A. Hospodková ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Layer Thickness ◽  
Electronic States ◽  
Inas Quantum Dots ◽  
Capping Layer ◽  
Self Assembled

scholarly journals Optical properties of InAs quantum dots embedded in InGaAs/AlGaAs/GaAs structures with different capping layers

2021 ◽  
Vol 1723 (1) ◽  
pp. 012037
Author(s):  
R Cisneros-Tamayo ◽  
T Torchynska ◽  
J L Casas-Espinola ◽  
G Polupan ◽  
M Reséndiz-Chincoya
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Inas Quantum Dots

Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates

2005 ◽  
Vol 22 (10) ◽  
pp. 2692-2695 ◽  
Author(s):  
Liang Song ◽  
Zhu Hong-Liang ◽  
Pan Jiao-Qing ◽  
Zhao Ling-Juan ◽  
Wang Wei
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Inas Quantum Dots
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