Phonon boundary scattering effect on thermal conductivity of thin films

2011 ◽  
Vol 110 (4) ◽  
pp. 046102 ◽  
Author(s):  
G. H. Tang ◽  
Y. Zhao ◽  
G. X. Zhai ◽  
C. Bi
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Boundary Scattering ◽  
Scattering Effect ◽  
Conductivity Of Thin Films

Cross-plane thermal conductivity of thin films characterized by Flash DSC measurement

2019 ◽  
Vol 677 ◽  
pp. 21-25 ◽  
Author(s):  
Yucheng He ◽  
Xiaoheng Li ◽  
Ling Ge ◽  
Qinyun Qian ◽  
Wenbing Hu
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Conductivity Of Thin Films

New device and method for measuring thermal conductivity of thin-films

2006 ◽  
Vol 45 (3) ◽  
pp. 313-318 ◽  
Author(s):  
Chelakara S. Subramanian ◽  
Tahani Amer ◽  
Billy T. UpChurch ◽  
David W. Alderfer ◽  
Cecil Burkett ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
New Device ◽  
Conductivity Of Thin Films

MeV Ion-Beam Bombardment Effects on The Thermoelectric Figures of Merit of Zn4Sb3 and ZrNiSn-Based half-heusler compounds

2007 ◽  
Vol 1020 ◽  
Author(s):  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
C. C. Smith ◽  
B. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Measurement System ◽  
Ion Beam ◽  
Electrical Energy ◽  
Figures Of Merit ◽  
Material Systems ◽  
The Cross ◽  
Conductivity Of Thin Films

AbstractSemiconducting â-Zn4Sb3and ZrNiSn-based half-heusler compound thin films were prepared by co-evaporation for the application of thermoelectric (TE) materials. High-purity solid zinc and antimony were evaporated by electron beam to grow the â-Zn4Sb3thin film while high-purity zirconium powder and nickel tin powders were evaporated by electron beam to grow the ZrNiSn-based half-heusler compound thin film. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of the thin films. The grown thin films were subjected to 5 MeV Si ions bombardments for generation of nanostructures in the films. We measured the thermal conductivity, Seebeck coefficient, and electrical conductivity of these two systems before and after 5 MeV Si ions beam bombardments. The two material systems have been identified as promising TE materials for the application of thermal-to-electrical energy conversion, but the efficiency still limits their applications. The electronic energy deposited due to ionization in the track of MeV ion beam can cause localized crystallization. The nanostructures produced by MeV ion beam can cause significant change in both the electrical and the thermal conductivity of thin films, thereby improving the efficiency. We used the 3ù-method measurement system to measure the cross-plane thermal conductivity ,the Van der Pauw measurement system to measure the cross-plane electrical conductivity, and the Seebeck-coefficient measurement system to measure the cross-plane Seebeck coefficient. The thermoelectric figures of merit of the two material systems were then derived by calculations using the measurement results. The MeV ion-beam bombardment was found to decrease the thermal conductivity of thin films and increase the efficiency of thermal-to-electrical energy conversion.

Using pulsed and modulated photothermal radiometry to measure the thermal conductivity of thin films

2013 ◽  
Vol 556 ◽  
pp. 1-5 ◽  
Author(s):  
Andrzej Kusiak ◽  
Jiri Martan ◽  
Jean-Luc Battaglia ◽  
Rostislav Daniel
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Photothermal Radiometry ◽  
Conductivity Of Thin Films
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