Determination of the lattice strain and chemical composition of semiconductor heterostructures by high-resolution x-ray diffraction

1996 ◽  
Vol 79 (8) ◽  
pp. 4101 ◽  
Author(s):  
Liberato De Caro ◽  
Cinzia Giannini ◽  
Leander Tapfer
Keyword(s):  
Chemical Composition ◽  
High Resolution ◽  
Lattice Strain ◽  
Semiconductor Heterostructures ◽  
X Ray Diffraction ◽  
X Ray

Formalism for the determination of intermediate stress gradients using X-ray diffraction

2009 ◽  
Vol 42 (2) ◽  
pp. 192-197 ◽  
Author(s):  
Thomas Gnäupel-Herold
Keyword(s):  
Lattice Strain ◽  
Narrow Line ◽  
X Ray Diffraction ◽  
Beam Spot ◽  
Strain Measurements ◽  
One Dimensional ◽  
X Ray ◽  
Stress Gradients ◽  
Shaped Beam

A method is outlined that allows the determination of one-dimensional stress gradients at length scales greater than 0.2 mm. By using standard four-circle X-ray diffractometer equipment and simple aperture components, length resolutions down to 0.05 mm in one direction can be achieved through constant orientation of a narrow, line-shaped beam spot. Angle calculations are given for the adjustment of goniometer angles, and for the effective azimuth and tilt of the scattering vector for general angle settings in a four-circle goniometer. The latter is necessary for the computation of stresses from lattice strain measurements.

scholarly journals Determination of Chromite Sands Suitability for Use in Moulding Sands

2017 ◽  
Vol 17 (2) ◽  
pp. 107-110
Author(s):  
K. Stec ◽  
J. Podwórny ◽  
B. Psiuk ◽  
Ł. Kozakiewicz
Keyword(s):  
Phase Composition ◽  
High Temperature ◽  
Chemical Composition ◽  
Chemical Properties ◽  
Grinding Process ◽  
X Ray Diffraction ◽  
Scanning Microscope ◽  
Spectroscopy Technique ◽  
X Ray

Abstract Using the available analytical methods, including the determination of chemical composition using wavelength-dispersive X-ray fluorescent spectroscopy technique and phase composition determined using X-ray diffraction, microstructural observations in a highresolution scanning microscope equipped with an X-ray microanalysis system as well as determination of characteristic softening and sintering temperatures using high-temperature microscope, the properties of particular chromite sands were defined. For the study has been typed reference sand with chemical properties, physical and thermal, treated as standard, and the sands of the regeneration process and the grinding process. Using these kinds of sand in foundries resulted in the occurrence of the phenomenon of the molding mass sintering. Impurities were identified and causes of sintering of a moulding sand based on chromite sand were characterized. Next, research methods enabling a quick evaluation of chromite sand suitability for use in the preparation of moulding sands were selected.

scholarly journals Determination of the Chemical Composition of Lithium Niobate Powders

Crystals ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 340 ◽  
Author(s):  
Oswaldo Sánchez-Dena ◽  
Carlos J. Villagómez ◽  
César D. Fierro-Ruíz ◽  
Artemio S. Padilla-Robles ◽  
Rurik Farías ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Lithium Niobate ◽  
Single Crystals ◽  
Structure Refinement ◽  
Linear Equations ◽  
Powdered Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scattering Effects

Existent methods for determining the composition of lithium niobate single crystals are mainly based on their variations due to changes in their electronic structure, which accounts for the fact that most of these methods rely on experimental techniques using light as the probe. Nevertheless, these methods used for single crystals fail in accurately predicting the chemical composition of lithium niobate powders due to strong scattering effects and randomness. In this work, an innovative method for determining the chemical composition of lithium niobate powders, based mainly on the probing of secondary thermodynamic phases by X-ray diffraction analysis and structure refinement, is employed. Its validation is supported by the characterization of several samples synthesized by the standard and inexpensive method of mechanosynthesis. Furthermore, new linear equations are proposed to accurately describe and determine the chemical composition of this type of powdered material. The composition can now be determined by using any of four standard characterization techniques: X-Ray Diffraction (XRD), Raman Spectroscopy (RS), UV-vis Diffuse Reflectance (DR), and Differential Thermal Analysis (DTA). In the case of the existence of a previous equivalent description for single crystals, a brief analysis of the literature is made.

Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction

2003 ◽  
Vol 255 (1-2) ◽  
pp. 63-67 ◽  
Author(s):  
X.H. Zheng ◽  
H. Chen ◽  
Z.B. Yan ◽  
Y.J. Han ◽  
H.B. Yu ◽  
...  
Keyword(s):  
High Resolution ◽  
Twist Angle ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mosaic Spread

Ion Implantation Defect Characterization by High-Resolution X-Ray Diffraction

1992 ◽  
Vol 262 ◽  
Author(s):  
Jos G.E. Klappe ◽  
István Bársony ◽  
Tom W. Ryan
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
Lattice Strain ◽  
Crystalline Silicon ◽  
High Energy ◽  
Silicon Sample ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
X Ray ◽  
Residual Defect

ABSTRACTHigh-energy ion-implantation is one of the roost critical processing steps regarding the formation of defects in mono-crystalline silicon. High- as well as low-doses implanted at various energies can result in relatively high residual defect concentrations after post-implantation annealing.Before annealing, the crystal lattice strain is mainly caused by the point defects. After annealing, the accommodation of substitutional impurities is the main origin of the residual lattice strain. High-Resolution X-ray Diffraction (HRXD) has been frequently used for the characterization of these structures. Dislocation loops formed during the high temperature step, however, cause enhanced diffuse X-ray scattering, which can dominate the measured X-ray intensity in conventional HRXD.Triple axis diffractometry is used in this study to analyze the size, type and location of defects in a boron implanted and rapid thermally annealed silicon sample.

Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction

2016 ◽  
Vol 9 (6) ◽  
pp. 061102 ◽  
Author(s):  
Yuichi Oshima ◽  
Elaheh Ahmadi ◽  
Stefan C. Badescu ◽  
Feng Wu ◽  
James S. Speck
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Composition Determination

Determination of the Twist Angle of GaN Film by High Resolution X-ray Diffraction

2008 ◽  
Vol 1 ◽  
pp. 045004 ◽  
Author(s):  
Hongtao Li ◽  
Yi Luo ◽  
Lai Wang ◽  
Guangyi Xi ◽  
Yang Jiang ◽  
...  
Keyword(s):  
High Resolution ◽  
Twist Angle ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gan Film
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