Kirkendall voids and the formation of amorphous phase in the Al-Pt thin-film system prepared by high-temperature successive deposition

1996 ◽  
Vol 79 (8) ◽  
pp. 4096 ◽  
Author(s):  
Zs. Radi ◽  
P. B. Barna ◽  
J. Lábár
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Amorphous Phase ◽  
Film System ◽  
Thin Film System ◽  
Kirkendall Voids

High-Temperature Regeneration of Perpendicular Exchange Bias in a Pt/Co/Pt/α-Cr2O3/Pt Thin Film System

2013 ◽  
Vol 6 (12) ◽  
pp. 123004 ◽  
Author(s):  
Yu Shiratsuchi ◽  
Yuichiro Takechi ◽  
Kentaro Toyoki ◽  
Yuuta Nakano ◽  
Satoshi Onoue ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Exchange Bias ◽  
Film System ◽  
Thin Film System

scholarly journals Misfit Strain Relaxation of Ferroelectric PbTiO3/LaAlO3 (111) Thin Film System

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Y. B. Xu ◽  
Y. L. Tang ◽  
Y. L. Zhu ◽  
Y. Liu ◽  
S. Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Strain Relaxation ◽  
Misfit Strain ◽  
Film System ◽  
Thin Film System

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

High Current Density Effect on In-situ Atomic Migration Characteristics of a BiTe Thin Film System

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC06
Author(s):  
Seunghyun Kim ◽  
Yong-Jin Park ◽  
Young-Chang Joo ◽  
Young-Bae Park
Keyword(s):  
Thin Film ◽  
Current Density ◽  
High Current Density ◽  
Density Effect ◽  
Film System ◽  
High Current ◽  
Thin Film System

scholarly journals Nanoscale diffusion in Pt/56Fe/57Fe thin-film system

2015 ◽  
Vol 589 ◽  
pp. 173-181 ◽  
Author(s):  
A. Tynkova ◽  
G.L. Katona ◽  
G. Erdélyi ◽  
L. Daróczi ◽  
А.I. Oleshkevych ◽  
...  
Keyword(s):  
Thin Film ◽  
Film System ◽  
Thin Film System

Linear, third order nonlinear and optical limiting studies on MZO/FTO thin film system fabricated by spin coating technique for electro-optic applications

2018 ◽  
Vol 33 (22) ◽  
pp. 3880-3889 ◽  
Author(s):  
Mohd. Shkir ◽  
Mohd. Arif ◽  
Vanga Ganesh ◽  
Mohamed A. Manthrammel ◽  
Arun Singh ◽  
...  
Keyword(s):  
Thin Film ◽  
Spin Coating ◽  
Optical Limiting ◽  
Spin Coating Technique ◽  
Film System ◽  
Third Order ◽  
Coating Technique ◽  
Thin Film System ◽  
Electro Optic ◽  
Image Position

Abstract

Solid-State Reactions in Ni(10 nm)/C(2 nm)/Si(001) Thin Film System

2007 ◽  
pp. 155-158
Author(s):  
Yu.N. Makogon ◽  
O.P. Pavlova ◽  
G. Beddies ◽  
A.V. Mogilatenko ◽  
O.V. Chukhrai
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reactions ◽  
Film System ◽  
Thin Film System

scholarly journals Structural and photoelectrochemical properties in the thin film system Cu–Fe–V–O and its ternary subsystems Fe–V–O and Cu–V–O

2020 ◽  
Vol 153 (1) ◽  
pp. 014707
Author(s):  
Swati Kumari ◽  
João R. C. Junqueira ◽  
Suchismita Sarker ◽  
Apurva Mehta ◽  
Wolfgang Schuhmann ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectrochemical Properties ◽  
Film System ◽  
Thin Film System
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