Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions

2011 ◽  
Vol 99 (4) ◽  
pp. 042501 ◽  
Author(s):  
H. Sato ◽  
M. Yamanouchi ◽  
K. Miura ◽  
S. Ikeda ◽  
H. D. Gan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Size Effect ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Switching Current

Magnetization Reversal by Spin-Polarized Current in Magnetic Tunnel Junctions with MgO Barriers

2006 ◽  
Vol 45 ◽  
pp. 2633-2639
Author(s):  
Hitoshi Kubota ◽  
A. Fukushima ◽  
Y. Ootani ◽  
S. Yuasa ◽  
K. Ando ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Magnetization Reversal ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Switching Model ◽  
Switching Current ◽  
Experimental Values

Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions were fabricated using UHV magnetron sputtering. Magnetoresistance and spin-transfer switching properties were investigated as a function of Co-Fe-B free layer thickness, between 1.5 nm and 3 nm. The intrinsic switching current and the thermal stability were derived from the pulse duration dependence of the switching current, analyzed based on the thermally activated switching model. Both switching currents, corresponding to parallel (P) to antiparallel (AP) (Ic0 +) and AP to P (Ic0 –) magnetization reversal, were found to be roughly proportional to the free layer thickness. The averaged intrinsic switching current density Jc0 av = (Ic0 +–Ic0 –)/(2A) (where A is the cell area) was in the range of 1–2×107 A/cm2. The experimental values of Jc0 ± agreed with theoretical values, determined taking into account the spintransfer efficiency for the case of magnetic tunnel junction. The thermal stability of the P and AP states was different, but roughly proportional to the free layer thickness in both cases. We attribute this difference to a disparity in the net magnetic field acting on the free layer magnetization in the P and AP states. The average of the thermal stability in the two states varied from 30 to 60 when the free layer thickness was increased. According to our findings, to guarantee the non-volatility of an MRAM device for about 10 years, the Co-Fe-B free layer should be thicker than 2 nm.

Critical switching current and thermal stability of magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layers

2013 ◽  
Vol 113 (9) ◽  
pp. 093906 ◽  
Author(s):  
Tae Young Lee ◽  
Chiyui Ahn ◽  
Byoung-Chul Min ◽  
Kyung-Ho Shin ◽  
Jong Min Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Switching Current ◽  
Thermal Stability Of

Thermal stability and magnetization switching in perpendicular magnetic tunnel junctions

2020 ◽  
Vol 116 (19) ◽  
pp. 192408 ◽  
Author(s):  
I. Volvach ◽  
J. G. Alzate ◽  
Y.-J. Chen ◽  
A. J. Smith ◽  
D. L. Kencke ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetization Switching

scholarly journals A TEM structural study of thermal stability of magnetic tunnel junctions integrated with CMOS devices

2008 ◽  
Vol 126 ◽  
pp. 012002 ◽  
Author(s):  
V K Lazarov ◽  
A Kohn ◽  
T Uhrmann ◽  
T Dimopoulos ◽  
H Brückl ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Structural Study ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Thermal Stability Of

Thermal stability of magnetic tunnel junctions studied by x-ray photoelectron spectroscopy

2001 ◽  
Vol 78 (2) ◽  
pp. 234-236 ◽  
Author(s):  
David J. Keavney ◽  
Sungkyun Park ◽  
Charles M. Falco ◽  
J. M. Slaughter
Keyword(s):  
Thermal Stability ◽  
Photoelectron Spectroscopy ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
X Ray ◽  
Thermal Stability Of

scholarly journals CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions

2012 ◽  
Vol 3 ◽  
pp. 3000204-3000204 ◽  
Author(s):  
H. Sato ◽  
M. Yamanouchi ◽  
K. Miura ◽  
S. Ikeda ◽  
R. Koizumi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Thickness Dependence ◽  
Stability Factor
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