scholarly journals Ion‐beam synthesis of amorphous SiC films: Structural analysis and recrystallization

1996 ◽  
Vol 79 (9) ◽  
pp. 6907-6913 ◽  
Author(s):  
C. Serre ◽  
L. Calvo‐Barrio ◽  
A. Pérez‐Rodríguez ◽  
A. Romano‐Rodríguez ◽  
J. R. Morante ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Amorphous Sic ◽  
Sic Films

Ion Beam Synthesis of SiC/Si Heterostructures by Mevva Implantation

1996 ◽  
Vol 438 ◽  
Author(s):  
S. P. Wong ◽  
L. C. Ho ◽  
Dihu Chen ◽  
W. S. Guo ◽  
H. Yan ◽  
...  
Keyword(s):  
Ion Beam ◽  
Metal Vapor ◽  
Critical Energy ◽  
Vacuum Arc ◽  
Crystalline Fraction ◽  
Annealing Conditions ◽  
Ion Beam Synthesis ◽  
Carbon Redistribution ◽  
Amorphous Sic ◽  
First Time

AbstractIon beam synthesis of SiC/Si heterostructures was performed by MEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were characterized by various techniques. Carbon redistribution in overstoichiometrically implanted samples during annealing to form a stoichiometric SiC layer has been observed for the first time. The FTIR spectra were found to be composed of two components, one attributed to amorphous SiC and the other to β-SiC. It was also found that there are critical dose and critical energy at which the crystalline fraction increases abruptly. Other results on electrical and optical characterization are also presented and discussed

Ion Beam Synthesis of SiC/Si Heterostructures by Mevva Implantation

1996 ◽  
Vol 439 ◽  
Author(s):  
S. P. Wong ◽  
L. C. Ho ◽  
Djhu Cihen ◽  
W. S. Guo ◽  
H. Yan ◽  
...  
Keyword(s):  
Ion Beam ◽  
Metal Vapor ◽  
Critical Energy ◽  
Vacuum Arc ◽  
Crystalline Fraction ◽  
Annealing Conditions ◽  
Ion Beam Synthesis ◽  
Carbon Redistribution ◽  
Amorphous Sic ◽  
First Time

AbstractIon beam synthesis of SiC/Si heterostructures was performed by MIEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were characterized by various techniques. Carbon redistribution in overstoichiometrically implanted samples during annealing to form a stoichiometric SiC layer has been observed for the first time. The FTIR spectra were found to be composed of two components, one attributed to amorphous SiC and the other to ß-SiC. It was also found that there are critical dose and critical energy at which the crystalline fraction increases abruptly. Other results on electrical and optical characterization are also presented and discussed.

Ion beam synthesis of Au nanoparticles embedded nano-composite glass

2013 ◽  
Author(s):  
Ranjana S. Varma ◽  
D. C. Kothari ◽  
Ravi Kumar ◽  
P. Kumar ◽  
S. S. Santra ◽  
...  
Keyword(s):  
Au Nanoparticles ◽  
Ion Beam ◽  
Nano Composite ◽  
Ion Beam Synthesis ◽  
Composite Glass

Mev Ion Beam Synthesis of Well-Defined Buried 3C-Sic Layers in Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
J.K.N. Lindner ◽  
B. Götz ◽  
A. Frohnwieser ◽  
B. Stritzker
Keyword(s):  
Electron Diffraction ◽  
Depth Distribution ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Synthesis ◽  
Post Implantation

AbstractWell-defined, homogenous, deep-buried 3C-SiC layers have been formed in silicon by ion beam synthesis using MeV C+ ions. Layers are characterized by RBS/channeling, X-ray diffraction, x-sectional TEM and electron diffraction. The redistribution of implanted carbon atoms into a rectangular carbon depth distribution associated with a well-defined layer during the post-implantation anneal is shown to depend strongly on the existence of crystalline carbide precipitates in the as-implanted state.

Ion beam synthesis of the diamond like carbon films for nanoimprint lithography applications

2006 ◽  
Vol 515 (2) ◽  
pp. 636-639 ◽  
Author(s):  
Š. Meškinis ◽  
V. Kopustinskas ◽  
K. Šlapikas ◽  
S. Tamulevičius ◽  
A. Guobienë ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Ion Beam Synthesis

Ion beam synthesis and carrier dynamics of ZnO nanoparticles embedded in a SiO2 matrix

2013 ◽  
Vol 112 (3) ◽  
pp. 801-806 ◽  
Author(s):  
B. Pandey ◽  
P. R. Poudel ◽  
A. K. Singh ◽  
A. Neogi ◽  
D. L. Weathers
Keyword(s):  
Zno Nanoparticles ◽  
Ion Beam ◽  
Carrier Dynamics ◽  
Sio2 Matrix ◽  
Ion Beam Synthesis

Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

1998 ◽  
Vol 514 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomne ◽  
S. Hogg ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Beam ◽  
Hexagonal Structure ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Thermal Stability Of

ABSTRACTThe Nd-disilicide, which exists only in a tetragonal or an orthorhombic structure, cannot be grown epitaxially on a Si(111) substrate. However, by adding Y and using channeled ion beam synthesis, hexagonal Nd0.32Y0.68Si1.7 epilayers with lattice constant of aepi = 0.3915 nm and cepi = 0.4152 nm and with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3 % respectively) are formed in a Si(111) substrate. This shows that the addition of Y to the Nd-Si system forces the latter into a hexagonal structure. The epilayer is stable up to 950 °C; annealing at 1000 °C results in partial transformation into other phases. The formation, the structure and the thermal stability of this ternary silicide have been studied using Rutherford backscattering/channeling, x-ray diffraction and transmission electron microscopy.

Buried (Fe1 −x Co x )Si2 layers with variable band gap formed by ion beam synthesis

1996 ◽  
Vol 62 (2) ◽  
pp. 155-162 ◽  
Author(s):  
D. Panknin ◽  
E. Wieser ◽  
W. Skorupa ◽  
W. Henrion ◽  
H. Lange
Keyword(s):  
Band Gap ◽  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Variable Band Gap
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