scholarly journals Depth dependence of residual strains in polycrystalline Mo thin films using high‐resolution x‐ray diffraction

1996 ◽  
Vol 79 (9) ◽  
pp. 6872-6879 ◽  
Author(s):  
S. G. Malhotra ◽  
Z. U. Rek ◽  
S. M. Yalisove ◽  
J. C. Bilello
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Depth Dependence ◽  
Residual Strains

Depth Dependence of Residual Strains in Textured Mo Thin Films Using High-Resolution X-Ray Diffraction

1995 ◽  
Vol 403 ◽  
Author(s):  
S. G. Malhotra ◽  
Z. U. Rek ◽  
S. M. Yalisove ◽  
J. C. Bilello
Keyword(s):  
High Resolution ◽  
Diffraction Method ◽  
Growth Direction ◽  
Elastic Model ◽  
Normal Strain ◽  
X Ray Diffraction ◽  
X Ray ◽  
Depth Dependence ◽  
Residual Strains ◽  
Film Substrate

AbstractThe magnitude of the average stress in a thin film can be obtained by measuring the curvature of the film-substrate couple. However, the details of the strain distribution, as a function of depth through the thickness of the film, can have important consequences in governing film quality and ultimate morphology. A high-resolution x-ray diffraction method was used to determine the depth dependence of strain in a textured Mo film, with a nominal thickness of 260 nm, which was deposited by planar magnetron sputtering onto Si (100) substrates. The principal strains, resolved onto a laboratory reference frame, displayed a negligible gradient in the azimuthal directions (x and y), but displayed a large gradient in the direction normal to the film (z). A similar trend was previously observed for a 100 nm polycrystalline film, but the magnitude of the normal strain very near the free surface was about a factor of 2 less. The increase in the normal strain may be due to the development of a preferred growth direction and grain facetting. A linear elastic model was also used to determine the strains in successive slabs of the film, where strain variations between slabs were indicated.

Investigation of Residual Strains of the Second Kind in Plastically Deformed Metallic Materials

1994 ◽  
Vol 376 ◽  
Author(s):  
M. Vrána ◽  
P. Klimanek ◽  
T. Kschidock ◽  
P. Lukáš ◽  
P. Mikula
Keyword(s):  
High Resolution ◽  
Neutron Diffraction ◽  
Stacking Faults ◽  
Metallic Materials ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray ◽  
Neutron Diffractometer ◽  
Residual Strains ◽  
Good Agreement

ABSTRACTInvestigation of strongly distorted crystal structures caused by dislocations, stacking-faults etc. in both plastically deformed f.c.c. and b.c.c. metallic materials was performed by the analysis of the neutron diffraction line broadening. Measurements were realized by means of the high resolution triple-axis neutron diffractometer equipped by bent Si perfect crystals as monochromator and analyzer at the NPI Řež. The substructure parameters obtained in this manner are in good agreement with the results of X-ray diffraction analysis.

High resolution X-ray diffraction investigation of epitaxially grown SrTiO 3 thin films by laser-MBE

2009 ◽  
Vol 33 (11) ◽  
pp. 949-953
Author(s):  
Zhai Zhang-Yin ◽  
Wu Xiao-Shan ◽  
Jia Quan-Jie
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Laser Mbe

scholarly journals High-resolution X-ray diffraction analysis of strain relaxation in epitaxial oxide thin films

2008 ◽  
Vol 64 (a1) ◽  
pp. C106-C106
Author(s):  
R. Guinebretiere ◽  
F. Conchon ◽  
A. Boulle ◽  
C. Girardot ◽  
S. Pignard ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Diffraction Analysis ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray ◽  
Epitaxial Oxide

scholarly journals Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Yu-Chiao Lin ◽  
Ikai Lo ◽  
Hui-Chun Shih ◽  
Mitch M. C. Chou ◽  
D. M. Schaadt
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Anisotropic Growth ◽  
X Ray Diffraction ◽  
X Ray

M-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [112-0]. According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate. The formation of Li5GaO4 would influence the surface morphology and crystal quality.

THE EFFECT OF FILM THICKNESS ON THE MICROSTRUCTURE OF La0.5Ca0.5MnO3 FILMS

2002 ◽  
Vol 16 (23) ◽  
pp. 3439-3447 ◽  
Author(s):  
X. M. CHEN ◽  
Y. WANG ◽  
C. X. LIU ◽  
Y. N. ZHAO ◽  
Z. H. MAI ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
High Resolution ◽  
Critical Thickness ◽  
Interface Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface And Interface ◽  
Atomic Force ◽  
Different Thickness

La 0.5 Ca 0.5 MnO 3 (LCMO) thin films grown on SrTiO 3 substrate with different thickness were investigated using high resolution X-ray diffraction, small angle reflectivity, and atomic force microscope (AFM). All the films are demonstrated to be c-axis oriented. The surface and interface structure of the films were obtained. It was found that the surface morphology of the films strongly depends on the thickness, and the film will crack when the thickness of the film reach a critical thickness. The surface roughness of the films increases with the thickness. The interface between the films and the substrates are very clear. There exists a non-designed cap layer on the surface of the LCMO layer.

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