Dependence of media noise on grain size and intergranular coupling in thin-film media

1996 ◽  
Vol 79 (8) ◽  
pp. 5339 ◽  
Author(s):  
Akira Kikuchi ◽  
Shinya Kawakita ◽  
Junichi Nakai ◽  
Takehito Shimatsu ◽  
Migaku Takahashi
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Media Noise

Effect of Grain Size and Magnetic Switching Volume on Media Noise Due to Intergranular Coupling in CoCrTaPt/Cr Thin Film Media

1998 ◽  
Vol 517 ◽  
Author(s):  
Sudhir S. Malhotra ◽  
Brij B. Lal ◽  
Michael A. Russak
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Grain Size ◽  
Substrate Temperature ◽  
High Density ◽  
Recording Media ◽  
Media Noise ◽  
Magnetic Switching ◽  
High Density Recording

AbstractIn this work the effect of grain size and magnetic switching volume on media noise due to intergranular coupling for CoCrTaPt/Cr thin film media deposited at substrate temperature of 160 and 260°C are investigated. The film deposited at substrate temperature of 260°C showed weaker intergranular interaction and lower media noise compared to the film deposited at 160°C. The magnetic switching volume (V*) is an important consideration for thermal stability and media noise in high density recording media. The magnetic switching volume V* for the film deposited at 160 and 260°C was calculated to be 3.7 x 10-18 and 3.2 x 10-18 cm3 respectively. The magnetic switching volume is correlated to the average Co-alloy grain size, media noise and the interactions between the grains.

Novel magneto-optical recording materials: Bi-substituted garnet films

1991 ◽  
Vol 49 ◽  
pp. 776-777
Author(s):  
Takao Suzuki ◽  
Hossein Nuri
Keyword(s):  
Grain Size ◽  
Amorphous Film ◽  
Nitrogen Atmosphere ◽  
Optical Recording ◽  
Garnet Film ◽  
Media Noise ◽  
Garnet Films ◽  
Order Of Magnitude ◽  
A New Technique ◽  
A Current

For future high density magneto-optical recording materials, a Bi-substituted garnet film ((BiDy)3(FeGa)5O12) is an attractive candidate since it has strong magneto-optic effect at short wavelengths less than 600 nm. The signal in read back performance at 500 nm using a garnet film can be an order of magnitude higher than a current rare earth-transition metal amorphous film. However, the granularity and surface roughness of such crystalline garnet films are the key to control for minimizing media noise.We have demonstrated a new technique to fabricate a garnet film which has much smaller grain size and smoother surfaces than those annealed in a conventional oven. This method employs a high ramp-up rate annealing (Γ = 50 ~ 100 C/s) in nitrogen atmosphere. Fig.1 shows a typical microstruture of a Bi-susbtituted garnet film deposited by r.f. sputtering and then subsequently crystallized by a rapid thermal annealing technique at Γ = 50 C/s at 650 °C for 2 min. The structure is a single phase of garnet, and a grain size is about 300A.

Pengaruh Pendopingan Karbon Terhadap Struktur Kristal dan Morfologi TIO2

2019 ◽  
Vol 2 (2) ◽  
Author(s):  
Frastica Deswardani ◽  
Helga Dwi Fahyuan ◽  
Rimawanto Gultom ◽  
Eif Sparzinanda
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Grain Size ◽  
Tio2 Thin Film ◽  
Crystal Size ◽  
Diffraction Peak ◽  
Carbon Doping ◽  
Tio2 Anatase ◽  
Spray Method ◽  
Carbon Analysis

Telah dilakukan penelitian mengenai pengaruh konsentrasi doping karbon pada lapisan tipis TiO2 yang ditumbuhkan dengan metode spray terhadap struktur kristal dan morfologi TiO2. Hasil karakterisasi SEM menunjukkan bahwa penambahan doping karbon dapat meningkatkan ukuran butir. Lapisan TiO2 doping karbon 8% diperoleh ukuran butir terbesar adalah 1.35 μm, sedangkan ukuran tekecilnya adalah 0.45 μm. Sementara itu, untuk lapisan tipis TiO2 didoping karbon 15% memiliki ukuran butir terbesar yaitu 1.76 μm dan terkecil 0.9 μm. Hasil XRD menunjukkan seluruh puncak difraksi lapisan tipis TiO2 dengan doping karbon 8% dan 15% merupakan TiO2 anatase. Ukuran kristal lapisan TiO2 didoping karbon 8% diperoleh sebesar 638,08 Å dan untuk pendopingan 15% karbon ukuran kristal lapisan tipis TiO2 adalah 638,09 Å, hal ini menunjukkan ukuran kristal kedua sampel tidak mengalami perubahan yang signifikan.   TiO2 thin film with carbon doping has been successfully grown by spray method. The research on the effect of carbon doping on crystal structure and morfology of TiO2 has been prepared by varying carbon concentration (8% and 15% carbon). Analysis of SEM showed that the addition of carbon may increase the grain size. Thin film of TiO2 doped carbon 8% has the largest grain size 1.35 μm, while the smallest grain size is 0.45 μm. Meanwhile, for thin film TiO2 doped carbon 15% has the largest grain size 1.76 μm and smallest 0.9 μm. The XRD results showed the entire diffraction peak of thin film TiO2 doped carbon 8% and 15% were TiO2 anatase. The crystal size of thin film TiO2 doped carbon 8% was obtained at 638.08 Å and for thin film TiO2 doped carbon 15% the crystalline size of TiO2 thin film was 638.09 Å, this shows that the crystal size of both samples did not change significantly.    

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

Indentation Creep of Molybdenum: Comparison Between Thin Film and Bulk Material

1994 ◽  
Vol 356 ◽  
Author(s):  
K. B. Yoder ◽  
D. S. Stone ◽  
J. C. Lin ◽  
R. A. Hoffmann
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Room Temperature ◽  
Bulk Material ◽  
High Hardness ◽  
Rate Sensitivity ◽  
Indentation Creep ◽  
Creep Properties ◽  
Measurement Path ◽  
Arc Evaporation

AbstractIndentation creep, load relaxation, and rate-change experiments probe room temperature and 80°C creep properties of a 1.3 μm-thick molybdenum film on silicon. The film, with 0.51 GPa compressive stress, 8 GPa hardness and estimated 40 nm grain size, was deposited using steered-arc evaporation at -17V bias. Despite its small grain size and high hardness, the thin film behaves like bulk molybdenum does: the rate sensitivity of the hardness is only weakly-dependent on measurement path (as with bulk material), and activation volumes calculated based on strain rate sensitivity are consistent with those of bulk molybdenum We suspect deformation mechanisms are similar to those in bulk molybdenum under similar conditions.

Analytical Treatment of Field-Effect Conduction in Polysilicon thin film Transistors

1997 ◽  
Vol 471 ◽  
Author(s):  
W. Eccleston
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Drain Current ◽  
High Current ◽  
Analytical Treatment ◽  
Channel Mobility ◽  
Current Region ◽  
The Relationship

ABSTRACTThe drift of electrons in the channels of Thin Film Transistors is analysed for discrete grains separated by grain boundaries containing amorphous silicon. The model provides the relationship channel mobility and grain size. The relationship between drain current and the terminal voltages is also predicted. The model relates to normal high current region of transistor operation.

Structural, Morphological and Adhesion Properties of Cofeb Thin Films Deposited by DC Magnetron Sputtering

2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Crystalline Structure ◽  
Glass Substrate ◽  
Intrinsic Stress ◽  
Dc Magnetron Sputtering ◽  
Adhesion Properties ◽  
Sputtering Power

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

Influence of grain size on the properties of AlN doped ZnO thin film

2011 ◽  
Vol 14 (1) ◽  
pp. 84-88 ◽  
Author(s):  
K.P. Bhuvana ◽  
J. Elanchezhiyan ◽  
N. Gopalakrishnan ◽  
T. Balasubramanian
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Zno Thin Film ◽  
Doped Zno

A novel functional polyurethane as a dielectric layer for organic thin-film transistors

2018 ◽  
Vol 42 (13) ◽  
pp. 10969-10975
Author(s):  
Xuesong Wang ◽  
He Wang ◽  
Yao Li ◽  
Ting Xu ◽  
Wei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
High Dielectric Constant ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
High Dielectric

A polyurethane material with a high dielectric constant was used to regulate the grain size of p-6P.

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