Effect of deposition temperature on the structural and electrical properties of laser‐crystallized hydrogenated amorphous silicon films

1996 ◽  
Vol 79 (3) ◽  
pp. 1569-1577 ◽  
Author(s):  
Nagarajan Sridhar ◽  
D. D. L. Chung ◽  
W. A. Anderson ◽  
J. Coleman
Keyword(s):  
Electrical Properties ◽  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Structural And Electrical Properties ◽  
Hydrogenated Amorphous

Effect of Deposition Temperature on the Photoresponse of Crystallized Hydrogenated Amorphous Silicon Films

1994 ◽  
Vol 358 ◽  
Author(s):  
Nagarajan Sridhar ◽  
D. D. L. Chung ◽  
W. A. Anderson ◽  
J. Coleman
Keyword(s):  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Laser Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Silicon Films ◽  
Laser Crystallization ◽  
Furnace Annealing ◽  
C 50 ◽  
Hydrogenated Amorphous

ABSTRACTThe deposition temperature of hydrogenated amorphous silicon films deposited by dc glow discharge was found to affect the photoresponse (ratio of the photo to dark conductivity) after crystallization of the film. This effect depended on the crystallization technique. For crystallization by laser annealing, the photoresponse (0.15 - 1.5) increased with increasing deposition temperature (150 - 300 °C) due to the increase in SiH and SiH2 bonding, as shown by infrared spectroscopy. For crystallization by furnace annealing (e.g. 650 °C, 50 h), the photoresponse (0.08 - 0) decreased with increasing deposition temperature (150 - 300 °C) due to the decrease in grain size and crystallinity as shown by x-ray diffraction; the complete loss in hydrogen during furnace annealing made the photoresponse low and the silicon-hydrogen bonding effect immaterial. Thus, laser crystallization at the highest deposition temperature gave the highest photoresponse.

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