Effect of pretreatment process parameters on diamond nucleation on unscratched silicon substrates coated with amorphous carbon films

1996 ◽  
Vol 79 (1) ◽  
pp. 485-492 ◽  
Author(s):  
Z. Feng ◽  
K. Komvopoulos ◽  
D. B. Bogy ◽  
J. W. Ager ◽  
S. Anders ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Process Parameters ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Diamond Nucleation ◽  
Amorphous Carbon Films

Channel Switching Effect and Magnetoresistance in Iron Doped Amorphous Carbon Films on Silicon Substrates

2011 ◽  
Vol 47 (10) ◽  
pp. 2732-2734 ◽  
Author(s):  
Caihua Wan ◽  
Xiaozhong Zhang ◽  
Johan Vanacken ◽  
Xili Gao ◽  
Xinyu Tan ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Switching Effect ◽  
Channel Switching ◽  
Amorphous Carbon Films ◽  
Iron Doped

Photoconductivity of iron doped amorphous carbon films on n-type silicon substrates

2009 ◽  
Vol 95 (2) ◽  
pp. 022105 ◽  
Author(s):  
Caihua Wan ◽  
Xiaozhong Zhang ◽  
Xin Zhang ◽  
Xili Gao ◽  
Xinyu Tan
Keyword(s):  
Amorphous Carbon ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Amorphous Carbon Films ◽  
Type Silicon ◽  
Iron Doped

Investigations on Silicon/Amorphous-Carbon and Silicon/Nanocrystalline Palladium/Amorphous-Carbon Interfaces

2008 ◽  
Vol 8 (8) ◽  
pp. 4295-4302 ◽  
Author(s):  
M. Roy ◽  
P. Sengupta ◽  
A. K. Tyagi ◽  
G. B. Kale
Keyword(s):  
Amorphous Carbon ◽  
Spectroscopic Studies ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Electron Probe Micro Analysis ◽  
Native Form ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
Reactive Interface ◽  
Micro Analysis

Our previous work revealed that significant enhancement in sp3-carbon content of amorphous carbon films could be achieved when grown on nanocrystalline palladium interlayer as compared to those grown on bare silicon substrates. To find out why, the nature of interface formed in both the cases has been investigated using Electron Probe Micro Analysis (EPMA) technique. It has been found that a reactive interface in the form of silicon carbide and/silicon oxy-carbide is formed at the interface of silicon/amorphous-carbon films, while palladium remains primarily in its native form at the interface of nanocrystalline palladium/amorphous-carbon films. However, there can be traces of dissolved oxygen within the metallic layer as well. The study has been corroborated further from X-ray photoelectron spectroscopic studies.

Humidity dependence of microwear characteristics of amorphous carbon films on silicon substrates

Wear ◽  
2003 ◽  
Vol 254 (10) ◽  
pp. 1042-1049 ◽  
Author(s):  
Shigeki Tsuchitani ◽  
Yasuyuki Sogawa ◽  
Reizo Kaneko ◽  
Shigeru Hirono ◽  
Shigeru Umemura
Keyword(s):  
Amorphous Carbon ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Amorphous Carbon Films ◽  
Humidity Dependence

Scanning Tunneling Microscopy of Amorphous Carbon Films

1990 ◽  
Vol 48 (1) ◽  
pp. 318-319
Author(s):  
Mircea Fotino ◽  
D.C. Parks
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Amorphous Carbon ◽  
Carbon Films ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Amorphous Carbon Films ◽  
Image Optimization ◽  
Step Procedure ◽  
Stm Images

In the last few years scanning tunneling microscopy (STM) has made it possible and easily accessible to visualize surfaces of conducting specimens at the atomic scale. Such performance allows the detailed characterization of surface morphology in an increasing spectrum of applications in a wide variety of fields. Because the basic imaging process in STM differs fundamentally from its equivalent in other well-established microscopies, good understanding of the imaging mechanism in STM enables one to grasp the correct information content in STM images. It thus appears appropriate to explore by STM the structure of amorphous carbon films because they are used in many applications, in particular in the investigation of delicate biological specimens that may be altered through the preparation procedures.All STM images in the present study were obtained with the commercial instrument Nanoscope II (Digital Instruments, Inc., Santa Barbara, California). Since the importance of the scanning tip for image optimization and artifact reduction cannot be sufficiently emphasized, as stressed by early analyses of STM image formation, great attention has been directed toward adopting the most satisfactory tip geometry. The tips used here consisted either of mechanically sheared Pt/Ir wire (90:10, 0.010" diameter) or of etched W wire (0.030" diameter). The latter were eventually preferred after a two-step procedure for etching in NaOH was found to produce routinely tips with one or more short whiskers that are essentially rigid, uniform and sharp (Fig. 1) . Under these circumstances, atomic-resolution images of cleaved highly-ordered pyro-lytic graphite (HOPG) were reproducibly and readily attained as a standard criterion for easily recognizable and satisfactory performance (Fig. 2).

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