Electron‐beam‐induced crystallization of isolated amorphous regions in Si, Ge, GaP, and GaAs
2002 ◽
Vol 82
(15)
◽
pp. 2825-2839
◽
2018 ◽
Vol 57
(4)
◽
pp. 041401
◽
1985 ◽
Vol 15
(5)
◽
pp. 781-783
◽
2011 ◽
Vol 248
(7)
◽
pp. 1605-1608
◽
2017 ◽
Vol 59
(1)
◽
pp. 151-155
◽
Keyword(s):