Electron‐beam‐induced crystallization of isolated amorphous regions in Si, Ge, GaP, and GaAs

1995 ◽  
Vol 78 (2) ◽  
pp. 974-982 ◽  
Author(s):  
I. Jenc̆ic̆ ◽  
M. W. Bench ◽  
I. M. Robertson ◽  
M. A. Kirk
1993 ◽  
Vol 311 ◽  
Author(s):  
J. Liu ◽  
C. J. Barbero ◽  
J. W. Corbett ◽  
K. Rajan ◽  
H. Leary

ABSTRACTAn in situ study of electron beam irradiation induced amorphous–to–crystalline transformation of Al2O3 films on silicon substrates has been carried out using transmission electron microscopy. Trigonal α–Al2O3 crystallites can be observed for electron beam dose rates larger than 10 mA/cm2. It is found that the nucleation and growth processes dominate near the Al2O3–Si interface. The possible effect of the silicon substrate on the growth of Al2O3 crystallites is considered.


2018 ◽  
Vol 57 (4) ◽  
pp. 041401 ◽  
Author(s):  
Dong Zhou ◽  
Liangcai Wu ◽  
Lin Wen ◽  
Liya Ma ◽  
Xingyao Zhang ◽  
...  

1985 ◽  
Vol 15 (5) ◽  
pp. 781-783 ◽  
Author(s):  
K. Shimizu ◽  
K. Kobayashi ◽  
G. E. Thompson ◽  
G. C. Wood

2011 ◽  
Vol 248 (7) ◽  
pp. 1605-1608 ◽  
Author(s):  
Wojciech Knoff ◽  
Krzysztof Świątek ◽  
Tomasz Andrearczyk ◽  
Viktor Domukhovski ◽  
Piotr Dziawa ◽  
...  

1996 ◽  
Vol 80 (11) ◽  
pp. 6170-6174 ◽  
Author(s):  
Long Ba ◽  
Yong Qin ◽  
Ziqin Wu

2012 ◽  
Vol 74 ◽  
pp. 12-15 ◽  
Author(s):  
Jack Murray ◽  
Kai Song ◽  
Wayne Huebner ◽  
Matthew O'Keefe

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