Forward bias voltage controlled infrared photodetection and electroluminescence from ap-i-nquantum dot structure

2011 ◽  
Vol 99 (2) ◽  
pp. 023502 ◽  
Author(s):  
Kai Cui ◽  
Wenquan Ma ◽  
Yanhua Zhang ◽  
Jianliang Huang ◽  
Yang Wei ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Forward Bias ◽  
Forward Bias Voltage ◽  
Infrared Photodetection

Electrical Transport Mechanisms in p+a-SiC:H/n c-Si Heterojunctions: dark J-V-T Characteristics

1996 ◽  
Vol 420 ◽  
Author(s):  
M. W. M van Cleef ◽  
M. W. H. Philippens ◽  
F. A. Rubinelli ◽  
M. Kolter ◽  
R. E. I. Schropp
Keyword(s):  
Bias Voltage ◽  
Electrical Transport ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Forward Bias ◽  
Equivalent Circuit Model ◽  
Interface State ◽  
Transport Mechanisms ◽  
Forward Bias Voltage ◽  
State Densities

AbstractIn the present paper we show results of dark current-voltage measurements performed on p+ a- SiC:H/n c-Si heterojunction diodes at various temperatures (100–400K). We investigated the voltage derivative of these J-V curves in order to the distinguish possible current transport mechanisms. It was found that for low temperatures (<300K), the current is determined by recombination of carriers in the crystalline silicon, whereas at high temperature (>300 K), by a tunnelling mechanism. At room temperature, both mechanisms contribute to the current. By using an equivalent circuit model and detailed numerical simulations we have interpreted our experimental characteristics. The simulations done at room temperature, show that at low forward bias voltage the current is controlled by recombination in the crystalline silicon and that at high forward bias voltage by a combination of multi-step tunnelling and a-SiC:H series resistance. For interface state densities equal to or higher than 1012 cm−2, the recombination was found to be dominated by the states at the amorphous-crystalline silicon interface.

The photocurrent modulation of quantum dot resonant tunneling diode with forward bias voltage

2011 ◽  
Author(s):  
Daming Zhou ◽  
Wangping Wang ◽  
Qianchun Weng ◽  
Ning Li ◽  
Bo Zhang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Bias Voltage ◽  
Resonant Tunneling ◽  
Forward Bias ◽  
Resonant Tunneling Diode ◽  
Forward Bias Voltage ◽  
Tunneling Diode

Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage

2007 ◽  
Vol 46 (No. 40) ◽  
pp. L963-L965 ◽  
Author(s):  
Yukio Narukawa ◽  
Masahiko Sano ◽  
Masatsugu Ichikawa ◽  
Shunsuke Minato ◽  
Takahiko Sakamoto ◽  
...  
Keyword(s):  
Bias Voltage ◽  
White Light ◽  
Light Emitting Diodes ◽  
Forward Bias ◽  
Luminous Efficiency ◽  
Light Emitting ◽  
Forward Bias Voltage ◽  
White Light Emitting Diodes

Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height

2010 ◽  
Vol 645-648 ◽  
pp. 893-896 ◽  
Author(s):  
Akimasa Kinoshita ◽  
Takasumi Ohyanagi ◽  
Tsutomu Yatsuo ◽  
Kenji Fukuda ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Bias Voltage ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Leakage Currents ◽  
Forward Bias Voltage ◽  
The Ideal

It is known that a Schottky barrier height (b) of metal/C-face 4H-SiC Schottky barrier diode (SBD) differ from b of metal/Si-face 4H-SiC SBD. Furthermore, b of metal/4H-SiC SBD varies with annealing temperature. We fabricate 0.231mm2 SBD with Ti/SiC interface using Si-face and C-face 4H-SiC. These SBDs are annealed at several temperatures after a formation of the Ti/SiC interface. As a result, b of Ti/C-face 4H-SiC interface annealed at 400 oC is nearly equal to b of Ti/Si-face 4H-SiC interface annealed at 500 oC and the n-values of these SBDs are nearly equal to the ideal value (unity). Using that annealing condition, we fabricated 25mm2 junction barrier Schottky (JBS) diodes with Ti/SiC interface on Si-face and C-face 4H-SiC epitaxial substrate. b of Si-face and C-face JBS diodes are 1.26eV and 1.24eV, respectively. The leakage currents for both Si-face and C-face JBS diodes are less than 1mA/cm2. The current of 100A is obtained at the forward bias voltage of 1.95V and 2.16V for the Si-face JBS and the C-face JBS.

Reducing forward bias voltage of InGaN/GaN-based light emitting diodes by using (In)GaN contact layer

2015 ◽  
Vol 54 (6) ◽  
pp. 062102
Author(s):  
Daesung Kang ◽  
Younghun Han ◽  
Donghun Kang ◽  
Hyunai Kyoung ◽  
Hwanhee Jeong ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Light Emitting Diodes ◽  
Forward Bias ◽  
Contact Layer ◽  
Light Emitting ◽  
Forward Bias Voltage

Chroma Stability of WOLED with High-Voltage

2018 ◽  
Vol 10 (3) ◽  
pp. 383-388
Author(s):  
Hongbo Liu ◽  
Lizhong Wang ◽  
Mingxing Song ◽  
Shumei Li
Keyword(s):  
Energy Transfer ◽  
Doping Concentration ◽  
Light Emission ◽  
Forward Bias ◽  
Blue Dye ◽  
Maximum Luminance ◽  
Forward Bias Voltage ◽  
Maximum Current ◽  
Dye Doping ◽  
Red Dye

Multilayer chroma stability of white OLEDs was realized with blue dye DPVBi and red dye DCJTB doped as luminescence layer. The blue dye doping concentration was kept at 6%, at the same time the red dye was reduced from 4%, 2%, 1% to 0.5%. The device color coordinates (CIE) were adjusted from (0.58, 0.42) to (0.31, 0.32), achieving the white light emission. A stable white emission for forward bias voltage changes from 6 to 17 V has been achieved. Its maximum luminance was 15030 cd/m2 at 17 V, and the maximum current efficiency was 4.65 cd/A at 9 V. We contributed the main reason of chroma stability to the complete energy transfer from CBP to DCJTB and the incomplete energy transfer between DPVBi and DCJTB by analyzing the spectrum and characteristic of the device so its performance was enhanced.

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