Numerical modeling of the dependence of the steady‐state photoconductivity in hydrogenated amorphous silicon on the rate of carrier generation

1995 ◽  
Vol 78 (1) ◽  
pp. 278-282 ◽  
Author(s):  
D. S. Shen ◽  
S. Wagner
Keyword(s):  
Numerical Modeling ◽  
Steady State ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Generation ◽  
Hydrogenated Amorphous

Dependence of Steady-State Defect Density in Hydrogenated Amorphous Silicon on Carrier Generation Rate Studied Over a Wide Range

1993 ◽  
Vol 297 ◽  
Author(s):  
Nobuhiro Hata ◽  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Steady State ◽  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Continuous Light ◽  
Effective Rate ◽  
Defect States ◽  
Carrier Generation ◽  
Wide Range ◽  
Hydrogenated Amorphous

Measurements of the steady-state defect density (Nst) in hydrogenated amorphous silicon under illumination of pulse-laser light, as well as of continuous light, were carried out; and the dependence of Nst on the effective rate of carrier generation (G) is presented. The values of G ranged from 8 x 1021 to 2.4 × 1023 cm-3 s-1, while the illumination temperature was kept at 30 °C or at 105 °C. The results showed trends of Nst increasing with G similarly to the trends in the literature, but covered a higher and wider G range, and fitted a defect model which assumes a limited number of possible defect states.

Steady-State Photoconductivity in Undoped Amorphous Silicon

1989 ◽  
Vol 149 ◽  
Author(s):  
Jeffrey Zhaohuai Liu ◽  
S. Wagner
Keyword(s):  
Experimental Data ◽  
Activation Energy ◽  
Steady State ◽  
Amorphous Silicon ◽  
Thermal Activation ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Activation Energy ◽  
Strong Temperature Dependence ◽  
Quasi Fermi Level ◽  
Hydrogenated Amorphous

ABSTRACTAn analytical expression for the thermal activation energy of the steady-state photoconductivity is shown to agree with experimental data in a range of temperature and generation rate for undoped hydrogenated amorphous silicon (a-Si:H). This agreement supports our suggestion that the commonly observed small activation energy of the photoconductivity in undoped a-Si:H originates in the strong temperature dependence of the quasi-Fermi level for electrons.

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