Numerical modeling of the optical properties of hydrogenated amorphous‐silicon‐basedp‐i‐nsolar cells deposited on rough transparent conducting oxide substrates

1994 ◽  
Vol 75 (2) ◽  
pp. 1074-1087 ◽  
Author(s):  
F. Leblanc ◽  
J. Perrin ◽  
J. Schmitt
Keyword(s):  
Numerical Modeling ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Transparent Conducting Oxide ◽  
Hydrogenated Amorphous Silicon ◽  
Transparent Conducting ◽  
Oxide Substrates ◽  
Hydrogenated Amorphous

Development of plasma-enhanced chemical vapor deposition microcrystalline silicon oxide as a replacement for N-type or back transparent conducting oxide layers in amorphous silicon single-junction solar cells

2014 ◽  
Vol 92 (7/8) ◽  
pp. 924-927 ◽  
Author(s):  
Shin-Wei Liang ◽  
Hung-Jung Hsu ◽  
Cheng-Hang Hsu ◽  
Chuang-Chuang Tsai
Keyword(s):  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Transparent Conducting Oxide ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Single Junction ◽  
Transparent Conducting ◽  
Hydrogenated Amorphous

The n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H(n)) thin films with varied electrical and optical properties were prepared. We employed μc-SiOx:H(n) as a replacement for n-type hydrogenated amorphous silicon (a-Si:H(n)) or back transparent conducting oxide (TCO) layers in hydrogenated amorphous silicon (a-Si:H) single-junction solar cells. Compared to the standard cell with a-Si:H(n)/ITO/Ag back reflecting structure, the cell using a-Si:H(n)/μc-SiOx:H(n)/Ag or μc-SiOx:H(n)/Ag showed a similar or even better performance. This improvement of cell performance mainly arose from the increased short-circuit current density (JSC) that originated from the increased long wavelength (580–660 nm) absorption in the absorber confirmed by the quantum efficiency measurement. The “all plasma-enhanced chemical vapor deposition ” (if the front TCO and metal contact are disregarded) process without TCO (indium tin oxide, ITO) sputtering can simplify the fabrication and result in better interface quality. Compared to the standard cell, the conversion efficiency of a-Si:H cells using an 80 nm thick μc-SiOx:H(n)/Ag back reflecting structure was enhanced from 9.32% to 9.84%, with VOC = 0.90 V, JSC = 14.84 mA/cm2, and FF = 73.7%.

On the effects of thermal treatment on the composition, structure, morphology, and optical properties of hydrogenated amorphous silicon-oxycarbide

2009 ◽  
Vol 24 (8) ◽  
pp. 2561-2573 ◽  
Author(s):  
Spyros Gallis ◽  
Vasileios Nikas ◽  
Eric Eisenbraun ◽  
Mengbing Huang ◽  
Alain E. Kaloyeros
Keyword(s):  
Optical Properties ◽  
Thermal Treatment ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Effective Cross Section ◽  
Silicon Oxycarbide ◽  
Nuclear Reaction Analysis ◽  
Structure Morphology ◽  
Composition Structure ◽  
Hydrogenated Amorphous

The composition, structure, morphology, and optical characteristics of hydrogenated amorphous silicon-oxycarbide (a-SiCxOyHz) materials were investigated as a function of experimental processing conditions and post-deposition thermal treatment. Thermal chemical vapor deposition (TCVD) was applied to the growth of three different types of a-SiCxOyHz films, namely, SiC-like (SiC1.08O0.07H0.21), Si-C-O (SiC0.50O1.20H0.22), and SiO2-like (SiC0.20O1.70H0.24). The resulting films were subsequently annealed at temperatures ranging from 500 °C to 1100 °C for 1 h in an argon atmosphere. The composition, structure, and morphology of as-deposited and post-annealed films were characterized by Fourier transform infrared spectroscopy (FTIR), x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), nuclear-reaction analysis (NRA), and scanning electron microscopy. Corresponding optical properties were assessed by spectroscopic ultraviolet-visible ellipsometry (UV-VIS-SE). These studies led to the identification of an optimized process window for the growth of Er doped silicon oxycarbide (SiC0.5O1.0:Er) thin film with strong room-temperature photoluminescence emission measured around 1540 nm within a broad (460 nm to 600 nm) wavelength band. Associated modeling studies showed that the effective cross section for Er excitation in the SiC0.5O1.0:Er matrix was approximately four orders of magnitude larger than its analog for direct optical excitation of Er ions.

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

RF-PECVD deposition and optical properties of hydrogenated amorphous silicon carbide thin films

2014 ◽  
Vol 40 (7) ◽  
pp. 9791-9797 ◽  
Author(s):  
Enlong Chen ◽  
Guoping Du ◽  
Yu Zhang ◽  
Xiaomei Qin ◽  
Hongmei Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous

Optical properties of doped hydrogenated amorphous silicon films

1986 ◽  
Vol 145 (2) ◽  
pp. 203-211 ◽  
Author(s):  
G. Allone ◽  
L. De Luca ◽  
V. Grasso ◽  
F. Neri
Keyword(s):  
Optical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogenated Amorphous
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