Time Resolved Radiation Pyrometer For Transient Temperature Measurement

2011 ◽  
Author(s):  
Amit S. Rav ◽  
A. K. Saxena ◽  
K. D. Joshi ◽  
T. C. Kaushik ◽  
Satish C. Gupta ◽  
...  
Keyword(s):  
Temperature Measurement ◽  
Transient Temperature ◽  
Radiation Pyrometer ◽  
Time Resolved

Congruent Melting Temperatures of Si-As Alloys Measured During Pulsed-Laser Melting and Rapid Solidification

1992 ◽  
Vol 279 ◽  
Author(s):  
J. A. Kittl ◽  
R. Reitano ◽  
M. J. Aziz ◽  
D. P. Brunco ◽  
M. O. Thompson
Keyword(s):  
Partition Coefficient ◽  
Temperature Measurement ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Heat Of Fusion ◽  
Interface Temperature ◽  
Congruent Melting ◽  
Laser Melting ◽  
Time Resolved ◽  
Melting Temperatures

ABSTRACTThe solidification of Si-As alloys induced by pulsed laser melting was studied at regrowth velocities where the partition coefficient is close to unity. The congruent melting temperatures, TO, of Si-As alloys were determined using a temperature measurement technique developed for this work, and were confirmed with TOmeasurements using three other methods. The time-resolved temperature measurement uses a thin-film platinum thermistor, below and electrically isolated from the Si-As alloy layer, to directly measure the temperature during solidification. This, combined with measurements of transient conductance of the Si-As alloy, time-resolved reflectivity and Rutherford Backscattering Spectrometry, permitted the determination of the solid-liquid interface temperature, velocity and partition coefficient, the latent heat of fusion and TO for Si - 4.5 at. % As and Si - 9 at. % As alloys.

Time-Resolved Surface Temperature Measurement of MALDI Matrices under Pulsed UV Laser Irradiation

2004 ◽  
Vol 108 (13) ◽  
pp. 2405-2410 ◽  
Author(s):  
Antonis Koubenakis ◽  
Vladimir Frankevich ◽  
Juan Zhang ◽  
Renato Zenobi
Keyword(s):  
Surface Temperature ◽  
Temperature Measurement ◽  
Laser Irradiation ◽  
Uv Laser ◽  
Time Resolved ◽  
Surface Temperature Measurement

Time-Resolved Micro-Raman Thermometry for Microsystems in Motion

2008 ◽  
Vol 130 (12) ◽  
Author(s):  
Justin R. Serrano ◽  
Sean P. Kearney
Keyword(s):  
Microelectromechanical Systems ◽  
Diagnostic Technique ◽  
Temperature Measurements ◽  
Transient Temperature ◽  
Raman Signal ◽  
Periodic Signal ◽  
Fast Time ◽  
Time Resolved ◽  
Microelectromechanical Devices ◽  
Reliable Temperature

Micro-Raman thermometry has been demonstrated to be a feasible technique for obtaining surface temperatures with micron-scale spatial resolution for microelectronic and microelectromechanical systems (MEMSs). However, the intensity of the Raman signal emerging from the probed device is very low and imposes a requirement of prolonged data collection times in order to obtain reliable temperature information. This characteristic currently limits Raman thermometry to steady-state conditions and thereby prevents temperature measurements of transient and fast time-scale events. In this paper, we discuss the extension of the micro-Raman thermometry diagnostic technique to obtain transient temperature measurements on microelectromechanical devices with 100 μs temporal resolution. Through the use of a phase-locked technique we are able to obtain temperature measurements on electrically powered MEMS actuators powered with a periodic signal. Furthermore, we demonstrate a way of obtaining reliable temperature measurements on micron-scale devices that undergo mechanical movement during the device operation.

Time Resolved Temperature Measurement of Single Gold Structures via Luminescence Thermometry

MRS Advances ◽  
2018 ◽  
Vol 3 (14) ◽  
pp. 747-751 ◽  
Author(s):  
Ali Rafiei Miandashti ◽  
Martin Kordesch ◽  
Hugh H. Richardson
Keyword(s):  
Thermal Conductivity ◽  
Temperature Measurement ◽  
Heat Dissipation ◽  
Time Resolved ◽  
Temperature Decay ◽  
Energy Transitions ◽  
The Absolute ◽  
532 Nm ◽  
Luminescence Thermometry

ABSTRACTHere we report the use of luminescence thermometry to measure the temperature decay from single gold structure into the substrate of AlGaN:Er3+ film. We looked at Er3+ ion photoluminescence upon illumination by modulated 532 nm laser and recorded time-resolved luminescence of 2H11/2 → 4I15/2 and the 4S3/2 → 4I15/2 energy transitions. We calculated the heat generated from gold microdisk and observed the rate of heat dissipation to the environment. We directly calculated the absolute thermal conductivity of 1.7 W/mK for AlGaN: Er3+ film which was in agreement with the literature.

PCB‐integrated thin film thermocouples for transient temperature measurement

2016 ◽  
Vol 52 (13) ◽  
pp. 1140-1141 ◽  
Author(s):  
WenLian Wang ◽  
Hui Zhang ◽  
XiaoJun Du ◽  
YouYi Sun
Keyword(s):  
Thin Film ◽  
Temperature Measurement ◽  
Transient Temperature ◽  
Thin Film Thermocouples

Transient Temperature Measurement Errors in Heated Slabs for Thermocouples Located at the Insulated Surface

1961 ◽  
Vol 83 (4) ◽  
pp. 505-506 ◽  
Author(s):  
D. R. Burnett
Keyword(s):  
Temperature Measurement ◽  
Measurement Errors ◽  
Wire Diameter ◽  
Temperature Measurements ◽  
Transient Temperature ◽  
Slab Thickness ◽  
Cold Side ◽  
Thermocouple Wire

A method is developed for estimating the error in “cold side” transient temperature measurements of slabs heated at one surface which is due to conduction of heat away from the junction through a thermocouple wire. Results are presented for a range of slab thickness/wire diameter ratios.

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