Facile Synthesis and Characterization of β-Ga[sub 2]O[sub 3] Nanostructures via Vapor Transport Method

2011 ◽  
Author(s):  
R. Jangir ◽  
Tapas Ganguli ◽  
P. Tiwari ◽  
H. Srivastava ◽  
S. K. Rai ◽  
...  
2019 ◽  
Vol 111 ◽  
pp. 191-194 ◽  
Author(s):  
Sihong Zhang ◽  
Jianyu Wang ◽  
Peng Chen ◽  
Yan Lu ◽  
Weiwei Hou ◽  
...  

2009 ◽  
Vol 165 (1-2) ◽  
pp. 23-27 ◽  
Author(s):  
G. Zaremba ◽  
M. Kaniewska ◽  
W. Jung ◽  
M. Guziewicz ◽  
K. Grasza

2019 ◽  
Vol 216 (16) ◽  
pp. 1970052 ◽  
Author(s):  
Qikun Wang ◽  
Dan Lei ◽  
Guangdong He ◽  
Jianchao Gong ◽  
Jiali Huang ◽  
...  

1991 ◽  
Vol 9 (3) ◽  
pp. 550-553 ◽  
Author(s):  
J. González‐Hernández ◽  
O. Zelaya ◽  
J. G. Mendoza‐Alverez ◽  
E. López‐Cruz ◽  
D. A. Pawlik ◽  
...  

2019 ◽  
Vol 216 (16) ◽  
pp. 1900118 ◽  
Author(s):  
Qikun Wang ◽  
Dan Lei ◽  
Guangdong He ◽  
Jianchao Gong ◽  
Jiali Huang ◽  
...  

1994 ◽  
Vol 139 (1-2) ◽  
pp. 27-36 ◽  
Author(s):  
J.L. Boone ◽  
Gene Cantwell ◽  
W.C. Harsch ◽  
J.E. Thomas ◽  
B.A. Foreman

2013 ◽  
Vol 29 (1) ◽  
pp. 3-7 ◽  
Author(s):  
Sibin Zuo ◽  
Haiyun Zhang ◽  
Jun Wang ◽  
Wenjun Wang

We report here the fabrication and characterization of ultra-long AlN whiskers by physical vapor transport method. The obtained whiskers are 1–3 µm in diameter and up to millimeters in length. The whiskers grow along the [0001] crystallographic direction and are well crystallized. They exhibit a strong ultraviolet emission at 345 nm, the shortest wavelength reported in AlN whiskers or nanowires. Our results indicate that these large scales of AlN whiskers are less contaminated by oxygen and other impurities compared with the previously reported ones, which may find wide applications in fabricating ultraviolet optoelectronic devices.


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