Characterization of individual ultra-long SnO 2 nanowires grown by vapor transport method

2016 ◽  
Vol 176 ◽  
pp. 294-297 ◽  
Author(s):  
Su Yong Lee ◽  
Hyon Chol Kang
2009 ◽  
Vol 165 (1-2) ◽  
pp. 23-27 ◽  
Author(s):  
G. Zaremba ◽  
M. Kaniewska ◽  
W. Jung ◽  
M. Guziewicz ◽  
K. Grasza

2019 ◽  
Vol 216 (16) ◽  
pp. 1970052 ◽  
Author(s):  
Qikun Wang ◽  
Dan Lei ◽  
Guangdong He ◽  
Jianchao Gong ◽  
Jiali Huang ◽  
...  

1991 ◽  
Vol 9 (3) ◽  
pp. 550-553 ◽  
Author(s):  
J. González‐Hernández ◽  
O. Zelaya ◽  
J. G. Mendoza‐Alverez ◽  
E. López‐Cruz ◽  
D. A. Pawlik ◽  
...  

2019 ◽  
Vol 216 (16) ◽  
pp. 1900118 ◽  
Author(s):  
Qikun Wang ◽  
Dan Lei ◽  
Guangdong He ◽  
Jianchao Gong ◽  
Jiali Huang ◽  
...  

1994 ◽  
Vol 139 (1-2) ◽  
pp. 27-36 ◽  
Author(s):  
J.L. Boone ◽  
Gene Cantwell ◽  
W.C. Harsch ◽  
J.E. Thomas ◽  
B.A. Foreman

2013 ◽  
Vol 29 (1) ◽  
pp. 3-7 ◽  
Author(s):  
Sibin Zuo ◽  
Haiyun Zhang ◽  
Jun Wang ◽  
Wenjun Wang

We report here the fabrication and characterization of ultra-long AlN whiskers by physical vapor transport method. The obtained whiskers are 1–3 µm in diameter and up to millimeters in length. The whiskers grow along the [0001] crystallographic direction and are well crystallized. They exhibit a strong ultraviolet emission at 345 nm, the shortest wavelength reported in AlN whiskers or nanowires. Our results indicate that these large scales of AlN whiskers are less contaminated by oxygen and other impurities compared with the previously reported ones, which may find wide applications in fabricating ultraviolet optoelectronic devices.


2011 ◽  
Author(s):  
R. Jangir ◽  
Tapas Ganguli ◽  
P. Tiwari ◽  
H. Srivastava ◽  
S. K. Rai ◽  
...  

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