Influence of misfit dislocations on thermal quenching of luminescence in InxGa1−xAs/GaAs multiple quantum wells

1995 ◽  
Vol 78 (11) ◽  
pp. 6687-6690 ◽  
Author(s):  
K. Rammohan ◽  
H. T. Lin ◽  
D. H. Rich ◽  
A. Larsson
Keyword(s):  
Quantum Wells ◽  
Thermal Quenching ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Quenching Of Luminescence

Temperature Dependence of Cathodoluminescence From InxGa1-xAs/GaAs Multiple Quantum Wells

1995 ◽  
Vol 379 ◽  
Author(s):  
K. Rammohan ◽  
D.H. Rich ◽  
A. Larsson
Keyword(s):  
Activation Energy ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Spatial Variations ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Nonradiative Recombination ◽  
Intensity Dependence ◽  
Thermally Activated

ABSTRACTThe temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The spatial variations in activation energy caused by the presence of interfacial misfit dislocations is examined. The CL intensity dependence on temperature for T ≲ 150 K is controlled by thermally activated nonradiative recombination. For T ≳ 150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.

Growth and Characterization of InAsxP1−x/InP Strained Multiple Quantum Wells by Gas Source Molecular Beam Expitaxy

1996 ◽  
Vol 450 ◽  
Author(s):  
H. C. Kuo ◽  
S. Thomas ◽  
A. P. Curtis ◽  
G. E. Stillman ◽  
C. H. Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Interband Transition ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Double Crystal ◽  
Cross Sectional ◽  
Transition Energies ◽  
Gas Source

AbstractInAsxPi.x/InP (10 period 50/100Å with x=0.25–0.79) pseudomorphically strained multiple quantum wells (SMQWs) were grown by gas source molecular beam expitaxy (GSMBE) at 470°C and characterized by cross-sectional transmission electron microscope (XTEM), double crystal x-ray diffraction (DCXRD), and optical spectroscopy. The structural analysis demonstrates that excellent control of the sharp interface and limited As-P interdiffusion can be achieved by GSMBE growth. XTEM images of these SMQWs display no misfit dislocations, and DCXRD scans reveal high order superlattice satellite peaks. Photoluminescence (PL) and transmission measurements were performed for all SMQWs to evaluate crystal quality. Only slight degradation in luminescence was observed as the As composition increased. Based on the three-band Kane model which includes the lattice strain, the transition energies of SMQWs were calculated using the conduction-band offset (Qc=δEc/δEg) as an adjustable parameter. The best fit of measured and calculated interband transition energies suggests that Qc is independent of As composition and is 0.70±0.05. Finally, a growth kinetics model based on the Langmuir equation was derived to realize the As/P incorporation ratio in the InAsP materials. Theoretical results show good agreement with experimental data.

Photoluminescence from Coherently Strained Si1−xGex Alloys

1990 ◽  
Vol 198 ◽  
Author(s):  
N.L. Rowell ◽  
J.-P. Noël ◽  
D.C. Houghton ◽  
D.D. Perovic
Keyword(s):  
Quantum Wells ◽  
Internal Quantum Efficiency ◽  
High Energy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Strained Si ◽  
Strained Layers ◽  
Defect Complexes ◽  
Random Alloy

ABSTRACTAn intense, broad photoluminescence PL peak, with an internal quantum efficiency as high as 31%, has been observed from a variety of structures containing Si1−xGex strained layers on Si(100) substrates; i.e. Si1−xGex thick random alloy layers, single quantum wells (SQW) and multiple quantum wells (MQW) with layers thick enough so that zone folding effects were not relevant. This peak, which shifted consistently and predictably with Ge concentration( 0.06 < × < 0.53), had its high energy edge near the established band gap for strained SiGe. PL excitation spectroscopy indicated that no phonons were involved in the process causing the SiGe PL peak. Samples deposited at ~ 400 °C exhibited low PL intensity, whereas annealing at ~ 600 °C enhanced the intensity by as much as two orders of magnitude. This anneal treatment was found to remove grown-in defect complexes without creating a significant density of misfit dislocations. The PL peak energy at 4.2 K varied from 620 to 990 meV for Ge fractions x from 0.53 to 0.06. When the samples were forced to relax, e.g. by higher temperature annealing, the luminescence of this peak either shifted to near the relaxed bandgap or was quenched by deep, dislocation related states. Prior to such relaxation, the efficient PL was due to exciton accumulation in the strained Si1−xGex layers of single and multiple quantum wells, where the bandgap was locally reduced. It is suggested that the recombination of electrons and holes occuring within a high-density electron hole condensate (EHC) can cause the observed spectrum.

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Study

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

2012 ◽  
Vol 100 (26) ◽  
pp. 261103 ◽  
Author(s):  
J.-R. Chang ◽  
S.-P. Chang ◽  
Y.-J. Li ◽  
Y.-J. Cheng ◽  
K.-P. Sou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescent Properties ◽  
Multiple Quantum Wells ◽  
Core Shell ◽  
Multiple Quantum

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

2011 ◽  
Vol 98 (18) ◽  
pp. 181904 ◽  
Author(s):  
Shigetaka Tomiya ◽  
Yuya Kanitani ◽  
Shinji Tanaka ◽  
Tadakatsu Ohkubo ◽  
Kazuhiro Hono
Keyword(s):  
Quantum Wells ◽  
Atomic Scale ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Scale Characterization
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