Field emission from a silicon surface‐potential well based on an Airy function approach

1995 ◽  
Vol 78 (2) ◽  
pp. 1254-1258 ◽  
Author(s):  
Qing‐An Huang
2019 ◽  
Vol 89 (6) ◽  
pp. 952
Author(s):  
Р.К. Яфаров

AbstractVariations of the morphology and field-emission properties of surface-structured n - and p -type silicon wafers have been studied. The silicon surface has been structured by etching in a fluorine–carbon plasma and depositing subnanodimensional island carbon masks. It has been shown that surface structuring in a fluorine–carbon plasma makes it possible to reach desired field-emission currents in electric fields of different strengths. Physicochemical models of field emission mechanisms and models of destruction of surface-modified multipoint silicon array cathodes have been considered.


1996 ◽  
Vol 68 (16) ◽  
pp. 2234-2236 ◽  
Author(s):  
Sung Ho Jo ◽  
Byung Gook Park ◽  
Jong Duk Lee

1979 ◽  
Vol 4 (3) ◽  
pp. 387-388
Author(s):  
D. Nagy ◽  
P.H. Cutler ◽  
E.T. Feuchtwang

1979 ◽  
Vol 19 (6) ◽  
pp. 2964-2974 ◽  
Author(s):  
D. Nagy ◽  
P. H. Cutler ◽  
T. E. Feuchtwang

2017 ◽  
Vol 121 (48) ◽  
pp. 27176-27181 ◽  
Author(s):  
Mohammed Ikbal ◽  
Dora Balogh ◽  
Evgeniy Mervinetsky ◽  
Ruthy Sfez ◽  
Shlomo Yitzchaik

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