Model of a tunneling current in a p-n junction based on armchair graphene nanoribbons - an Airy function approach and a transfer matrix method

2014 ◽  
Author(s):  
Endi Suhendi ◽  
Rifki Syariati ◽  
Fatimah A. Noor ◽  
Neny Kurniasih ◽  
Khairurrijal
Keyword(s):  
Transfer Matrix ◽  
Transfer Matrix Method ◽  
Matrix Method ◽  
Graphene Nanoribbons ◽  
Airy Function ◽  
Tunneling Current ◽  
Function Approach ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

Modeling of Electron Tunneling Current in a p-n Junction Based on Strained Armchair Graphene Nanoribbons with Extended Tight Binding and Transfer Matrix Method

2015 ◽  
Vol 1112 ◽  
pp. 102-105
Author(s):  
Rifky Syariati ◽  
Endi Suhendi ◽  
Fatimah A. Noor ◽  
Khairurrijal
Keyword(s):  
Band Gap ◽  
Transfer Matrix ◽  
Transfer Matrix Method ◽  
Matrix Method ◽  
Electron Tunneling ◽  
Graphene Nanoribbons ◽  
Tight Binding ◽  
Tunneling Current ◽  
Computation Method ◽  
Armchair Graphene Nanoribbons

A theoretical model of electron tunneling current in a p-n junction based on strained armchair graphenenanoribbons (AGNRs) is developed. The effects of strain to the energy dispersion relation and the band gap of AGNR are formulated under the extended tight binding method. The electron transmittance was derived by utilizing the transfer matrix method. The calculated transmittance was then used to obtain the tunneling current by employing the Landauer formula with Gauss Quadrature computation method. The effects of strain to the energy band gap, AGNR width, and tunneling current are studied thoroughly.

Simulation of Dirac Electron Tunneling Current in Armchair Graphene Nanoribbon Tunnel Field-Effect Transistors Using a Transfer Matrix Method

2015 ◽  
Vol 1112 ◽  
pp. 128-132
Author(s):  
Endi Suhendi ◽  
Rifky Syariati ◽  
Fatimah A. Noor ◽  
Neny Kurniasih ◽  
Khairurrijal
Keyword(s):  
Transfer Matrix ◽  
Transfer Matrix Method ◽  
Matrix Method ◽  
Field Effect ◽  
Electron Tunneling ◽  
Field Effect Transistors ◽  
Tunneling Current ◽  
Dirac Electron ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

We simulate quantum mechanical tunneling current in armchair graphene nanoribbon tunnel field-effect transistors (AGNR-TFETs). The relativistic Dirac equation is used to determine electron wave functions in the AGNRs, while the potential profile is solved by the Poisson equation. We use a transfer matrix method (TMM) to calculate the electron transmittance and the Dirac electron tunneling current in the AGNR-TFETs. The results show that the Dirac electron tunneling current increases with increasing the drain and gate voltages. Moreover, the AGNR width and the thickness of insulator affect the characteristics of the Dirac electron tunneling currents.

Simulation of Dirac Tunneling Current of an Armchair Graphene Nanoribbon-Based P-N Junction Using a Transfer Matrix Method

2014 ◽  
Vol 974 ◽  
pp. 205-209 ◽  
Author(s):  
Endi Suhendi ◽  
Rifky Syariati ◽  
Fatimah A. Noor ◽  
Neny Kurniasih ◽  
Khairurrijal
Keyword(s):  
Dirac Equation ◽  
Transfer Matrix ◽  
Transfer Matrix Method ◽  
Matrix Method ◽  
Incidence Angle ◽  
Tunneling Current ◽  
Numerical Approach ◽  
Graphene Nanoribbon ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

We have studied tunneling current in a p-n junction based on armchair graphene nanoribbon (AGNR) by using the relativistic Dirac equation and a transfer matrix method (TMM). The electron wave function was derived by solving the relativistic Dirac equation. The TMM, which is a numerical approach, was used to calculate electron transmittance and the tunneling current. The results showed that the tunneling current increases with the bias voltage. On the other hand, the tunneling current increases with the decreases in the electron incidence angle and temperature. Moreover, the increases in the AGNR width and electric field in the p-n junction result in the increase in the tunneling current.

Modeling of Drain Current in Armchair Graphene Nanoribbon Field Effect Transistor Using Transfer Matrix Method

2014 ◽  
Vol 896 ◽  
pp. 367-370 ◽  
Author(s):  
Endi Suhendi ◽  
Fatimah A. Noor ◽  
Neny Kurniasih ◽  
Khairurrijal
Keyword(s):  
Transfer Matrix ◽  
Transfer Matrix Method ◽  
Matrix Method ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Graphene Nanoribbon ◽  
Effect Transistor ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

Drain current in an armchair graphene nanoribbon field effect transistor (AGNRFET) has been quantum mechanically modeled. The transfer matrix method (TMM) was employed to obtain the electron transmittance, and the obtained transmittance was then utilized to calculate the drain current by using the Landauer formula. The calculated results showed that the drain current increases with the gate and drain voltages. It was also shown that the threshold voltage for the device is around 0.3 V. In addition, the AGNR width influences the drain current of AGNRFET.

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