Electron energy states at the interface between semi‐insulating polycrystalline silicon and crystalline silicon

1995 ◽  
Vol 78 (3) ◽  
pp. 1824-1831 ◽  
Author(s):  
Bo Liss ◽  
Olof Engström
Keyword(s):  
Electron Energy ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Energy States

scholarly journals Индий-индуцированная кристаллизация тонких пленок аморфного субоксида кремния

2020 ◽  
Vol 46 (12) ◽  
pp. 14
Author(s):  
А.О. Замчий ◽  
Е.А. Баранов ◽  
И.Е. Меркулова ◽  
Н.А. Лунев ◽  
В.А. Володин ◽  
...  
Keyword(s):  
Crystallization Temperature ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
High Vacuum ◽  
Stoichiometric Coefficient ◽  
Free Standing ◽  
Solid Phase Crystallization ◽  
Silicon Suboxide ◽  
Induced Crystallization

A novel fabrication method of polycrystalline silicon by indium-induced crystallization (InIC) of amorphous silicon suboxide thin films with a stoichiometric coefficient of 0.5 (a-SiO0.5) is proposed. It was shown that the use of indium in the annealing process of a SiO0.5 allowed to decrease the crystallization temperature to 600°С which was significantly lower than the solid-phase crystallization temperature of the material - 850°С. As a result of the high-vacuum InIC of a-SiO0.5, the formation of free-standing micron-sized crystalline silicon particles took place.

Characterization of Crystalline Silicon via XRPD

2004 ◽  
Vol 443-444 ◽  
pp. 83-86
Author(s):  
Giovanni Berti ◽  
U. Bartoli ◽  
G. Basile ◽  
P. Becker ◽  
Andrew N. Fitch
Keyword(s):  
Grain Size ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Crystal Silicon ◽  
Conventional Radiation ◽  
Structural Contribution ◽  
Structural Arrangements

Three blocks of silicon have been crashed in this experiment in order to verify the crashing effects on specimens having distinct original micro-structural arrangements. One of them comes from a rod bar of mono-crystal silicon, two others were from polycrystalline silicon manufactured by two distinct manufacturers with distinct growing process. Several specimens of powders, differing in type and grain size, were obtained by treating these source samples. This paper reports on data collected from synchrotron and conventional radiation and the results show that powders obtained from mono-crystalline silicon provide diffraction profiles, where the structural contribution is smaller than for polycrystalline silicon specimens. The peaks from the 'mono-crystal powder' resulted even narrower than peaks from SRM Silicon 640b by NIST.

Electrical Properties of Polycrystalline-Silicon Thin Films for VLSI

1986 ◽  
Vol 71 ◽  
Author(s):  
T I Kamins
Keyword(s):  
Electrical Properties ◽  
Integrated Circuits ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Single Crystal Silicon ◽  
Active Regions ◽  
Crystal Silicon ◽  
Polysilicon Film

AbstractThe electrical properties of polycrystalline silicon differ from those of single-crystal silicon because of the effect of grain boundaries. At low and moderate dopant concentrations, dopant segregation to and carrier trapping at grain boundaries reduces the conductivity of polysilicon markedly compared to that of similarly doped single-crystal silicon. Because the properties of moderately doped polysilicon are limited by grain boundaries, modifying the carrier traps at the grain boundaries by introducing hydrogen to saturate dangling bonds improves the conductivity of polysilicon and allows fabrication of moderate-quality transistors with their active regions in the polycrystalline films. Removing the grain boundaries by melting and recrystallization allows fabrication of high-quality transistors. When polysilicon is used as an interconnecting layer in integrated circuits, its limited conductivity can degrade circuit performance. At high dopant concentrations, the active carrier concentration is limited by the solid solubility of the dopant species in crystalline silicon. The current through oxide grown on polysilicon can be markedly higher than that on oxide of similar thickness grown on singlecrystal silicon because the rough surface of a polysilicon film enhances the local electric field in oxide thermally grown on it. Consequently, the structure must be controlled to obtain reproducible conduction through the oxide. The differences in the behavior of polysilicon and single-crystal silicon and the limited electrical conductivity in polysilicon are having a greater impact on integrated circuits as the feature size decreases and the number of devices on a chip increases in the VLSI era.

Distinction between amorphous and crystalline silicon by means of electron energy-loss spectroscopy

2015 ◽  
Vol 120 (1) ◽  
pp. 393-399 ◽  
Author(s):  
Martin Schade ◽  
Bodo Fuhrmann ◽  
Angelika Chassé ◽  
Frank Heyroth ◽  
Maurizio Roczen ◽  
...  
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Crystalline Silicon ◽  
Electron Energy Loss

Facetting Growth of Low Temperature Polycrystalline Silicon by Ecr-Cvd with Hydrogen Dilution Method

1998 ◽  
Vol 507 ◽  
Author(s):  
H.-L. Hsiao ◽  
A.-B. Yang ◽  
H.-L. Hwang
Keyword(s):  
Free Energy ◽  
Surface Free Energy ◽  
Liquid Layer ◽  
Polycrystalline Silicon ◽  
Diffusion Processes ◽  
Crystalline Silicon ◽  
Dark Field ◽  
Dilution Method ◽  
Hydrogen Dilution ◽  
Quasi Liquid Layer

ABSTRACTThe polycrystalline silicon films with grain size of 1 μ m have been successful deposited on glass substrates using ECR-CVD with hydrogen dilution method at 250°C and without any thermal annealing. The deposited poly-Si films exhibit severe “hill and valley” surface roughness and facets structures. The X-ray diffraction spectra show that the dominant crystal textures are <220> and <111> orientations. The leaf-like two-fold symmetrical grain shape and the corresponding crystallography diffraction pattern indicate the orientation of largest grain is <110>. The dark field TEM image also shows the upside octahedral facets shape. Considering the effect of orientation on deposition rate and symmetry, the possible facets orientation should be <311>. Moreover, the grain sizes of poly-Si thin films deposited on bare Si wafer and on oxidized Si substrates or glass are almost the same. The facetting and textural structures can be attributed to the surface free energy change induced by the adatom quasi-liquid layer which is composed by the radicals and energetic atomic hydrogen. This adatom quasi-liquid layer would dramatically change the surface diffusion processes of adsorbed precursors and surface free energy of low index planes. Therefore, the SiHn radicals and SinHm molecular precursors with enhanced surface mobility would relax to their stable sites and form the crystalline silicon clusters.

Large Grained, Low Defect Density Polycrystalline Silicon on Glass Substrates by Large-area Diode Laser Crystallisation

2012 ◽  
Vol 1426 ◽  
pp. 251-256 ◽  
Author(s):  
Bonne Eggleston ◽  
Sergey Varlamov ◽  
Jialiang Huang ◽  
Rhett Evans ◽  
Jonathon Dore ◽  
...  
Keyword(s):  
Diode Laser ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Open Circuit ◽  
Large Area ◽  
High Quality ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Open Circuit Voltages

ABSTRACTA new method to form high quality crystalline silicon thin films on cheap glass substrates is developed using a single pass of a line-focus cw diode laser in air. The laser process results in the formation of large high-quality crystals as they grow laterally in the scan direction – seeded by the previously crystallised region. Grains 10 μm in thickness, up to millimetres in length and hundreds of microns in width have been grown with virtually zero detectable intragrain defects. Another mode is found which results in much smaller crystals grown by partial melting. The dominant grain boundaries identified are Σ3 <111> 60° twins. Hall mobilities as high as 470 cm2/Vs have been recorded. A diffused emitter is used to create a p-n junction at the rear of the films which produces open-circuit voltages as high as 539 mV.

scholarly journals Molecular Dynamics Simulation of Nanoscale Abrasive Wear of Polycrystalline Silicon

Crystals ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 463 ◽  
Author(s):  
Pengzhe Zhu ◽  
Rui Li ◽  
Hanyu Gong
Keyword(s):  
Molecular Dynamics ◽  
Grain Size ◽  
Size Effect ◽  
Friction Force ◽  
Polycrystalline Silicon ◽  
Normal Force ◽  
Crystalline Silicon ◽  
Grain Size Effect ◽  
Single Crystalline Silicon ◽  
Nanoscale Wear

In this work, molecular dynamics simulations of the nanoscratching of polycrystalline and singlecrystalline silicon substrates using a single-crystal diamond tool are conducted to investigate the grain size effect on the nanoscale wear process of polycrystalline silicon. We find that for a constant indentation depth, both the average normal force and friction force are much larger for single-crystalline silicon compared to polycrystalline silicon. It is also found that, for the polycrystalline substrates, both the average normal force and friction force increase with increasing grain size. However, the friction coefficient decreases with increasing grain size, and is the smallest for single-crystalline silicon. We also find that the quantity of wear atoms increases nonlinearly with the average normal load, inconsistent with Archard’s law. The quantity of wear atoms is smaller for polycrystalline substrates with a larger average grain size. The grain size effect in the nanoscale wear can be attributed to the fact that grain boundaries contribute to the plastic deformation of polycrystalline silicon.

Recrystallization of Polycrystalline Silicon Over SiO2 through Strip Electron Beam Irradiation

1983 ◽  
Vol 23 ◽  
Author(s):  
Y. Hayafuji ◽  
T. Yanada ◽  
H. Hayashi ◽  
K. E. Williams ◽  
S. Usui ◽  
...  
Keyword(s):  
Electron Beam ◽  
Simple Model ◽  
Polycrystalline Silicon ◽  
Electron Beam Irradiation ◽  
Crystalline Silicon ◽  
Growth Direction ◽  
Crystal Quality ◽  
Beam Irradiation ◽  
Growth Interface ◽  
Substrate Orientation

ABSTRACTWe have studied the influences of substrate orientation and growth direction on laterally seeded recrystallization of poly-crystalline silicon on a SiO2; film through strip electron beam irradiation. We found that growth in a [110] direction produced films with better crystal quality than growth in a [100] direction on a (001) substrate, and that growth in a [211] direction provides better crystal quality than growth in a [011] direction on a (111) substrate. A simple model of the growth interface composed of {111} planes is proposed

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