Step bunching on {111} facets in the selective growth of GaAs by metalorganic vapor phase epitaxy

1995 ◽  
Vol 78 (4) ◽  
pp. 2854-2856 ◽  
Author(s):  
Toshio Nishida ◽  
Masanori Shinohara ◽  
Naohisa Inoue
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Step Bunching

Lateral diffusion of sources during selective growth of Si‐doped GaAs layers by metalorganic vapor phase epitaxy

1993 ◽  
Vol 74 (2) ◽  
pp. 1327-1330 ◽  
Author(s):  
Naoki Hara ◽  
Kazushige Shiina ◽  
Tatsuya Ohori ◽  
Kazumi Kasai ◽  
Junji Komeno
Keyword(s):  
Vapor Phase ◽  
Lateral Diffusion ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Si Doped

Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 694-697 ◽  
Author(s):  
Masaki Nagahara ◽  
Seiro Miyoshi ◽  
Hiroyuki Yaguchi ◽  
Kentaro Onabe ◽  
Yasuhiro Shiraki ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Small Areas ◽  
Cubic Gan

Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy

2001 ◽  
Vol 40 (Part 1, No. 3B) ◽  
pp. 1896-1898 ◽  
Author(s):  
Tomonobu Kato ◽  
Yoshio Honda ◽  
Yasutoshi Kawaguchi ◽  
Masahito Yamaguchi ◽  
Nobuhiko Sawaki
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Growth

Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
D. B. Thomson ◽  
T. Gehrke ◽  
K. J. Linthicum ◽  
P. Rajagopal ◽  
R. F. Davis
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Lateral Epitaxial Overgrowth ◽  
Vertical Growth ◽  
Process Route

AbstractPendeo-epitaxy is a type of selective growth of thin films from the sidewalls of etched forms. The resulting films are suspended from the sidewalls and do not interface with the substrate. This process route has advantages over conventional lateral epitaxial overgrowth (LEO) techniques. In this research, pendeo-epitaxial growth of GaN films has been achieved on elongated GaN seed columns. The seed columns were etched from GaN grown on 6H-SiC (0001) substrates via metalorganic vapor phase epitaxy (MOVPE). Silicon nitride mask layers atop the GaN seed columns forced growth from the sidewalls. Pendeo-epitaxial growth of GaN was investigated using several growth temperatures. Higher growth temperatures resulted in improved coalescence due to greater lateral to vertical growth ratios.

Theory and experiment of step bunching on misoriented GaAs(001) during metalorganic vapor-phase epitaxy

2008 ◽  
Vol 92 (1) ◽  
pp. 013117 ◽  
Author(s):  
A. L.-S. Chua ◽  
E. Pelucchi ◽  
A. Rudra ◽  
B. Dwir ◽  
E. Kapon ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Step Bunching ◽  
Theory And Experiment
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