scholarly journals Degradation of inversion layer electron mobility due to interface traps in metal‐oxide‐semiconductor transistors

1995 ◽  
Vol 78 (5) ◽  
pp. 3252-3257 ◽  
Author(s):  
Toshimasa Matsuoka ◽  
Shigenari Taguchi ◽  
Quazi Deen Mohd Khosru ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi
Keyword(s):  
Metal Oxide ◽  
Electron Mobility ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps

scholarly journals A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

2021 ◽  
Vol 129 (5) ◽  
pp. 054501
Author(s):  
Jordan R. Nicholls ◽  
Arnar M. Vidarsson ◽  
Daniel Haasmann ◽  
Einar Ö. Sveinbjörnsson ◽  
Sima Dimitrijev
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

2011 ◽  
Vol 4 (6) ◽  
pp. 064201 ◽  
Author(s):  
Tomonori Nishimura ◽  
Choong Hyun Lee ◽  
Toshiyuki Tabata ◽  
Sheng Kai Wang ◽  
Kosuke Nagashio ◽  
...  
Keyword(s):  
High Pressure ◽  
Metal Oxide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility
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