Study of rf‐sputtered yttrium oxide films on silicon by capacitance measurements

1995 ◽  
Vol 77 (12) ◽  
pp. 6350-6353 ◽  
Author(s):  
C. H. Ling ◽  
J. Bhaskaran ◽  
W. K. Choi ◽  
L. K. Ah
Keyword(s):  
Yttrium Oxide ◽  
Oxide Films ◽  
Capacitance Measurements

scholarly journals Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si

2003 ◽  
Vol 94 (1) ◽  
pp. 318-325 ◽  
Author(s):  
E. K. Evangelou ◽  
C. Wiemer ◽  
M. Fanciulli ◽  
M. Sethu ◽  
W. Cranton
Keyword(s):  
Magnetron Sputtering ◽  
Yttrium Oxide ◽  
Structural Characteristics ◽  
Oxide Films ◽  
Rf Magnetron Sputtering

scholarly journals Structure and properties of zirconium oxide films doped with yttrium oxide obtained by laser deposition in vacuum

2020 ◽  
pp. 10-18
Author(s):  
Nikolai A. Bosak ◽  
Aleksandr N. Chumakov ◽  
Aleksandr A. Shevchenok ◽  
Liudmila V. Baran ◽  
Victoria V. Malutina-Bronskaya ◽  
...  
Keyword(s):  
Yttrium Oxide ◽  
Zirconium Oxide ◽  
Near Infrared ◽  
Radiation Power ◽  
Oxide Films ◽  
Surface States ◽  
Infrared Region ◽  
Laser Exposure ◽  
Glass Substrates ◽  
Middle Infrared

The thin films deposited in vacuum (2 ⋅ 10–2 mm Hg) on the silicon and glass substrates under the multi-pulse high-frequency (10 –15 kHz) laser exposure (laser radiation power density 100 MW/cm2 and the distance from the target to the substrate 40 mm) for zirconium oxide ZrO2 ceramics doped with yttrium oxide 5 % Y2O3. The morphology of the obtained films was studied using atomic force microscopy. The features of transmission spectra in the visible, near infrared and middle infrared region were revealed. The transmission of the zirconium oxide film on the silicon substrate reached 12 % in the spectral region from 1.0 to 2.5 μm, and in the region from 2.6 to 6.0 μm was 4.7 %. On a glass substrate, the transmittance at a wavelength of 643 nm was 60 %, and at a wavelength of 2500 nm it reached 87 %. In the middle infrared region, transmission at a frequency of 2548 cm–1 was 70 % and reached 75 % at a frequency of 3566 cm–1. The volt-ampere and capacitance-voltage characteristics of the obtained zirconium oxide films were characterized by non-linearity, including hysteresis, and are probably due to the presence of discrete surface states with a wide energy spectrum associated with nanoparticles and nanocrystalline film inclusions.

Erratum: Structural and Electrical Characterizations of Yttrium Oxide Films after Postannealing Treatments [J. Electrochem. Soc., 152, F217 (2005)]

2006 ◽  
Vol 153 (2) ◽  
pp. L4
Author(s):  
C. Durand ◽  
C. Dubourdieu ◽  
C. Vallée ◽  
E. Gautier ◽  
F. Ducroquet ◽  
...  
Keyword(s):  
Yttrium Oxide ◽  
Oxide Films ◽  
Electrical Characterizations

Structural and Electrical Characterizations of Yttrium Oxide Films after Postannealing Treatments

2005 ◽  
Vol 152 (12) ◽  
pp. F217 ◽  
Author(s):  
C. Durand ◽  
C. Dubourdieu ◽  
C. Vallée ◽  
E. Gautier ◽  
F. Ducroquet ◽  
...  
Keyword(s):  
Yttrium Oxide ◽  
Oxide Films ◽  
Electrical Characterizations

Influence of deposition conditions on the optical properties of erbium-doped yttrium oxide films grown by aerosol–UV assisted MOCVD

2011 ◽  
Vol 131 (11) ◽  
pp. 2311-2316 ◽  
Author(s):  
Rached Salhi ◽  
Ramzi Maalej ◽  
Mohieddine Fourati ◽  
Yannick Guyot ◽  
Odette Chaix-Pluchery ◽  
...  
Keyword(s):  
Optical Properties ◽  
Yttrium Oxide ◽  
Oxide Films ◽  
Erbium Doped ◽  
Deposition Conditions

Growth and characterization of yttrium oxide films by reactive magnetron sputtering

2011 ◽  
Vol 519 (15) ◽  
pp. 4894-4898 ◽  
Author(s):  
Jiaqi Zhu ◽  
Yuankun Zhu ◽  
Weixia Shen ◽  
Yongjie Wang ◽  
Jiecai Han ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Yttrium Oxide ◽  
Oxide Films ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron
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