Electric field induced crystallization in phase-change materials for memory applications

2011 ◽  
Vol 98 (22) ◽  
pp. 223102 ◽  
Author(s):  
Krisztian Kohary ◽  
C. David Wright
Keyword(s):  
Electric Field ◽  
Phase Change ◽  
Phase Change Materials ◽  
Memory Applications ◽  
Induced Crystallization

scholarly journals Scalability of Phase Change Materials in Nanostructure Template

2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Wei Zhang ◽  
Biyun L. Jackson ◽  
Ke Sun ◽  
Jae Young Lee ◽  
Shyh-Jer Huang ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Scaling Limit ◽  
Phase Change Memory ◽  
Leakage Power ◽  
Memory Element ◽  
Transmission Electron ◽  
Diffraction Mode ◽  
Memory Applications ◽  
Change Memory

The scalability of In2Se3, one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual In2Se3nanoclusters are confined in the nanosize pits with well-defined shape and dimension permitting the systematic study of the ultimate scaling limit of its use as a phase change memory element. In2Se3of progressively smaller volume is heated inside a transmission electron microscope operating in diffraction mode. The volume at which the amorphous-crystalline transition can no longer be observed is taken as the ultimate scaling limit, which is approximately 5 nm3for In2Se3. The physics for the existence of scaling limit is discussed. Using phase change memory elements in memory hierarchy is believed to reduce its energy consumption because they consume zero leakage power in memory cells. Therefore, the phase change memory applications are of great importance in terms of energy saving.

scholarly journals Breakdown of the Stokes-Einstein relation above the melting temperature in a liquid phase-change material

2018 ◽  
Vol 4 (11) ◽  
pp. eaat8632 ◽  
Author(s):  
Shuai Wei ◽  
Zach Evenson ◽  
Moritz Stolpe ◽  
Pierre Lucas ◽  
C. Austen Angell
Keyword(s):  
Liquid Phase ◽  
Phase Change ◽  
Melting Temperature ◽  
Phase Change Materials ◽  
Dynamic Properties ◽  
Switching Behavior ◽  
Einstein Relation ◽  
Elastic Neutron ◽  
Phase Switching ◽  
Memory Applications

The dynamic properties of liquid phase-change materials (PCMs), such as viscosity η and the atomic self-diffusion coefficientD, play an essential role in the ultrafast phase switching behavior of novel nonvolatile phase-change memory applications. To connect η toD, the Stokes-Einstein relation (SER) is commonly assumed to be valid at high temperatures near or above the melting temperatureTmand is often used for assessing liquid fragility (or crystal growth velocity) of technologically important PCMs. However, using quasi-elastic neutron scattering, we provide experimental evidence for a breakdown of the SER even at temperatures aboveTmin the high–atomic mobility state of a PCM, Ge1Sb2Te4. This implies that although viscosity may have strongly increased during cooling, diffusivity can remain high owing to early decoupling, being a favorable feature for the fast phase switching behavior of the high-fluidity PCM. We discuss the origin of the observation and propose the possible connection to a metal-semiconductor and fragile-strong transition hidden belowTm.

Threshold switching via electric field induced crystallization in phase-change memory devices

2012 ◽  
Vol 100 (25) ◽  
pp. 253105 ◽  
Author(s):  
Jorge A. Vázquez Diosdado ◽  
Peter Ashwin ◽  
Krisztian I. Kohary ◽  
C. David Wright
Keyword(s):  
Electric Field ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Threshold Switching ◽  
Induced Crystallization ◽  
Change Memory

SET Characteristics of Phase Change Bridge Devices

2008 ◽  
Vol 1072 ◽  
Author(s):  
Daniel Krebs ◽  
Simone Raoux ◽  
Charles T. Rettner ◽  
Robert M. Shelby ◽  
Geoffrey W. Burr ◽  
...  
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Phase Change Materials ◽  
Random Access ◽  
Stable States ◽  
Threshold Switching ◽  
Non Volatile Memory ◽  
Switching Material ◽  
The Difference ◽  
Memory Applications

ABSTRACTScaling studies have demonstrated that Phase Change Random Access Memory (PCRAM) is one of the most promising candidates for future non-volatile memory applications. The search for suitable phase change materials with optimized properties is therefore actively pursuit. In this paper, SET (crystallization) characteristics of an ultra fast switching material Ge15Sb85 in phase change memory bridge cell devices are presented. It was found that reproducible switching between two stable states with one decade resistance contrast and current pulses as short as 10 ns for SET and RESET (re-amorphization) operation is possible. Particular emphasis was placed on the difference in crystallization kinetics between the as-deposited and melt-quenched amorphous phase. Evidence is given for the existence of an electrical field as the critical parameter for threshold switching rather than a threshold voltage. For Ge15Sb85 a threshold switching field of 9MV/m was measured and it was shown that switching from the melt-quenched amorphous phase to the crystalline phase is about 600 times faster than crystallization from the as-deposited amorphous phase.

Electron-beam-irradiation-induced crystallization of amorphous solid phase change materials

2018 ◽  
Vol 57 (4) ◽  
pp. 041401 ◽  
Author(s):  
Dong Zhou ◽  
Liangcai Wu ◽  
Lin Wen ◽  
Liya Ma ◽  
Xingyao Zhang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Phase Change ◽  
Electron Beam Irradiation ◽  
Phase Change Materials ◽  
Solid Phase ◽  
Amorphous Solid ◽  
Beam Irradiation ◽  
Induced Crystallization

scholarly journals Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials

2016 ◽  
Vol 117 (6) ◽  
Author(s):  
Peter Zalden ◽  
Michael J. Shu ◽  
Frank Chen ◽  
Xiaoxi Wu ◽  
Yi Zhu ◽  
...  
Keyword(s):  
Electric Field ◽  
Phase Change ◽  
Phase Change Materials ◽  
Threshold Switching

Electric-field-assisted crystallisation in phase-change materials

2012 ◽  
Vol 249 (10) ◽  
pp. 1897-1901 ◽  
Author(s):  
Krisztian Kohary ◽  
Jorge A. Vázquez Diosdado ◽  
Peter Ashwin ◽  
C. David Wright
Keyword(s):  
Electric Field ◽  
Phase Change ◽  
Phase Change Materials
Sign in / Sign up

Export Citation Format

Share Document