Electric-field-assisted crystallisation in phase-change materials

2012 ◽  
Vol 249 (10) ◽  
pp. 1897-1901 ◽  
Author(s):  
Krisztian Kohary ◽  
Jorge A. Vázquez Diosdado ◽  
Peter Ashwin ◽  
C. David Wright
Keyword(s):  
Electric Field ◽  
Phase Change ◽  
Phase Change Materials

scholarly journals Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials

2016 ◽  
Vol 117 (6) ◽  
Author(s):  
Peter Zalden ◽  
Michael J. Shu ◽  
Frank Chen ◽  
Xiaoxi Wu ◽  
Yi Zhu ◽  
...  
Keyword(s):  
Electric Field ◽  
Phase Change ◽  
Phase Change Materials ◽  
Threshold Switching

scholarly journals Liquid Crystals as Phase Change Materials for Thermal Stabilization

2018 ◽  
Vol 2018 ◽  
pp. 1-8
Author(s):  
Eva Klemenčič ◽  
Mitja Slavinec
Keyword(s):  
Liquid Crystals ◽  
Heat Source ◽  
Electric Field ◽  
Phase Change ◽  
Phase Change Materials ◽  
Thermal Stabilization ◽  
Phase Change Temperature ◽  
Thermotropic Liquid Crystals ◽  
Key Factor ◽  
Change Temperature

Thermal stabilization exploiting phase change materials (PCMs) is studied theoretically and numerically. Using the heat source approach in numerical simulations, we focus on phase change temperature as a key factor in improving thermal stabilization. Our focus is to analyze possible mechanisms to tune the phase change temperature. We use thermotropic liquid crystals (LCs) as PCMs in a demonstrative system. Using the Landau-de Gennes mesoscopic approach, we show that an external electric field or appropriate nanoparticles (NPs) dispersed in LCs can be exploited to manipulate the phase change temperature.

scholarly journals Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Nishant Saxena ◽  
Christoph Persch ◽  
Matthias Wuttig ◽  
Anbarasu Manivannan
Keyword(s):  
Thermal Stability ◽  
Electric Field ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Threshold Switching ◽  
Experimental Findings ◽  
Thermal Stability Of ◽  
Change Memory

AbstractPhase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. We report here, a unique property-portfolio of high thermal stability and picosecond threshold switching characteristics in In3SbTe2 (IST) PCM devices. Our experimental findings reveal an improved thermal stability of amorphous IST compared to most other phase change materials. Furthermore, voltage dependent threshold switching and current-voltage characteristics corroborate an extremely fast, yet low electric field threshold switching operation within an exceptionally small delay time of less than 50 picoseconds. The combination of low electric field and high speed switching with improved thermal stability of IST makes the material attractive for next-generation high-speed, non-volatile memory applications.

Crystallization fractionation technology for paraffin-based phase change materials production

2020 ◽  
pp. 33-38
Author(s):  
S.S. Kruglov (Jr.) ◽  
◽  
G.L. Patashnikov ◽  
S.S. Kruglov (Sr.) ◽  
◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials
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