Generation and relaxation phenomena of positive charge and interface trap in a metal‐oxide‐semiconductor structure

Quazi Deen Mohd Khosru; Naoki Yasuda; Kenji Taniguchi; Chihiro Hamaguchi

doi:10.1063/1.359445

Generation and relaxation phenomena of positive charge and interface trap in a metal‐oxide‐semiconductor structure

Journal of Applied Physics ◽

10.1063/1.359445 ◽

1995 ◽

Vol 77 (9) ◽

pp. 4494-4503 ◽

Cited By ~ 17

Author(s):

Quazi Deen Mohd Khosru ◽

Naoki Yasuda ◽

Kenji Taniguchi ◽

Chihiro Hamaguchi

Keyword(s):

Metal Oxide ◽

Positive Charge ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Interface Trap ◽

Relaxation Phenomena ◽

Metal Oxide Semiconductor Structure

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Oxide thickness dependence of interface trap generation in a metal‐oxide‐semiconductor structure during substrate hot‐hole injection

Applied Physics Letters ◽

10.1063/1.110451 ◽

1993 ◽

Vol 63 (18) ◽

pp. 2537-2539 ◽

Cited By ~ 13

Author(s):

Quazi Deen Mohd Khosru ◽

Naoki Yasuda ◽

Kenji Taniguchi ◽

Chihiro Hamaguchi

Keyword(s):

Metal Oxide ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Thickness Dependence ◽

Oxide Semiconductor ◽

Hole Injection ◽

Interface Trap ◽

Metal Oxide Semiconductor Structure

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Damage effect of hafnium oxide gate dielectric based metal–oxide–semiconductor structure under gamma-ray irradiation

AIP Advances ◽

10.1063/5.0048080 ◽

2021 ◽

Vol 11 (6) ◽

pp. 065304

Author(s):

Man Ding ◽

Xin Liu

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Gamma Ray ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Damage Effect ◽

Gamma Ray Irradiation ◽

Metal Oxide Semiconductor Structure

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Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method

Solid-State Electronics ◽

10.1016/j.sse.2016.04.007 ◽

2016 ◽

Vol 122 ◽

pp. 56-63 ◽

Cited By ~ 9

Author(s):

S. Toumi ◽

Z. Ouennoughi ◽

K.C. Strenger ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Optimization Method ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Nordheim Tunneling ◽

Metal Oxide Semiconductor Structure

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Interface characterization of a metal-oxide-semiconductor structure by biased X-ray photoelectron spectroscopy

Surface and Interface Analysis ◽

10.1002/sia.3154 ◽

2010 ◽

Vol 42 (2) ◽

pp. 70-76 ◽

Cited By ~ 1

Author(s):

M. Yoshitake ◽

K. Ohmori ◽

T. Chikyow

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

X Ray ◽

Interface Characterization ◽

Metal Oxide Semiconductor Structure

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Accurate measurement of extremely low surface recombination velocities on charged, oxidized silicon surfaces using a simple metal-oxide-semiconductor structure

Applied Physics Letters ◽

10.1063/1.2434172 ◽

2007 ◽

Vol 90 (4) ◽

pp. 042104 ◽

Cited By ~ 19

Author(s):

W. E. Jellett ◽

K. J. Weber

Keyword(s):

Metal Oxide ◽

Surface Recombination ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Silicon Surfaces ◽

Oxide Semiconductor ◽

Simple Metal ◽

Simple Metal Oxide ◽

Metal Oxide Semiconductor Structure

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Highly efficient diamond electromechanical transducer based on released metal–oxide–semiconductor structure

Applied Physics Letters ◽

10.1063/5.0058646 ◽

2021 ◽

Vol 119 (7) ◽

pp. 073504

Author(s):

Meiyong Liao ◽

Liwen Sang ◽

Huanying Sun ◽

Tiefu Li ◽

Satoshi Koizumi

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Electromechanical Transducer ◽

Highly Efficient ◽

Metal Oxide Semiconductor Structure

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Interface Barrier Determination by Internal Photoemission: Applications to Metal/Oxide/Semiconductor Structure

ECS Meeting Abstracts ◽

10.1149/ma2008-01/18/713 ◽

2008 ◽

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Internal Photoemission ◽

Interface Barrier ◽

Metal Oxide Semiconductor Structure

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P‐213: Late‐News‐Poster: Electroluminescence of Oxide Phosphor in Metal‐Oxide‐Semiconductor Structure

SID Symposium Digest of Technical Papers ◽

10.1002/sdtp.14250 ◽

2020 ◽

Vol 51 (1) ◽

pp. 1787-1789

Author(s):

Taewook Kang ◽

Jehong Park ◽

Boowon Park ◽

Jimin Lim ◽

Hyunwoo Kang ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Late News ◽

Metal Oxide Semiconductor Structure

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Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structure

Microelectronics Reliability ◽

10.1016/0026-2714(65)90138-1 ◽

1965 ◽

Vol 4 (3) ◽

pp. 309

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Silicon Surfaces ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Structure

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Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress

Applied Physics Letters ◽

10.1063/1.1420491 ◽

2001 ◽

Vol 79 (23) ◽

pp. 3797-3799 ◽

Cited By ~ 15

Author(s):

Chao-Chi Hong ◽

Jenn-Gwo Hwu

Keyword(s):

Metal Oxide ◽

Compressive Stress ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Structure

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