Study of band‐gap narrowing effect and nonradiative recombination centers for heavily C‐doped GaAs by photoluminescence spectroscopy

1995 ◽  
Vol 77 (9) ◽  
pp. 4822-4824 ◽  
Author(s):  
B. P. Yan ◽  
J. S. Luo ◽  
Q. L. Zhang
Keyword(s):  
Band Gap ◽  
Photoluminescence Spectroscopy ◽  
Nonradiative Recombination ◽  
Recombination Centers ◽  
Band Gap Narrowing

Band gap narrowing effect in Be-doped AlxGa1−xAs studied by photoluminescence spectroscopy

2000 ◽  
Vol 44 (1) ◽  
pp. 37-40 ◽  
Author(s):  
H.Q Zheng ◽  
H Wang ◽  
P.H Zhang ◽  
Z Zeng ◽  
K Radahakrishnan ◽  
...  
Keyword(s):  
Band Gap ◽  
Photoluminescence Spectroscopy ◽  
Band Gap Narrowing

Evaluation of Band-Gap Energies and Characterization of Nonradiative Recombination Centers of Film and Bulk GaN Crystals

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 4905-4908 ◽  
Author(s):  
Masaru Kamano ◽  
Masanobu Haraguchi ◽  
Masuo Fukui ◽  
Minoru Kuwahara ◽  
Toshihiro Okamoto ◽  
...  
Keyword(s):  
Band Gap ◽  
Nonradiative Recombination ◽  
Bulk Gan ◽  
Recombination Centers

Band‐gap narrowing in highly dopedn‐ andp‐type GaAs studied by photoluminescence spectroscopy

1989 ◽  
Vol 66 (9) ◽  
pp. 4381-4386 ◽  
Author(s):  
G. Borghs ◽  
K. Bhattacharyya ◽  
K. Deneffe ◽  
P. Van Mieghem ◽  
R. Mertens
Keyword(s):  
Band Gap ◽  
Photoluminescence Spectroscopy ◽  
Band Gap Narrowing

Band-gap narrowing and potential fluctuation in Si-doped GaN

1999 ◽  
Vol 74 (1) ◽  
pp. 102-104 ◽  
Author(s):  
In-Hwan Lee ◽  
J. J. Lee ◽  
P. Kung ◽  
F. J. Sanchez ◽  
M. Razeghi
Keyword(s):  
Band Gap ◽  
Potential Fluctuation ◽  
Si Doped ◽  
Band Gap Narrowing
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