Changes in the densities of dislocations on distinct slip systems during stress relaxation in thin aluminium layers: The interpretation of x‐ray diffraction line broadening and line shift

1995 ◽  
Vol 77 (10) ◽  
pp. 5026-5049 ◽  
Author(s):  
A. C. Vermeulen ◽  
R. Delhez ◽  
Th. H. de Keijser ◽  
E. J. Mittemeijer
1989 ◽  
Vol 24 (10) ◽  
pp. 3779-3786 ◽  
Author(s):  
P. van Mourik ◽  
N. M. Maaswinkel ◽  
Th. H. de Keijser ◽  
E. J. Mittemeijer

2006 ◽  
Vol 54 (3) ◽  
pp. 390-401 ◽  
Author(s):  
Joaquin Bastida ◽  
Marek A. Kojdecki ◽  
Pablo Pardo ◽  
Pedro Amorós

1999 ◽  
Vol 562 ◽  
Author(s):  
U. Welzel ◽  
P. Lamparter ◽  
E. J. Mittemeijer

ABSTRACTInterdiffusion in sputtered niobium(45nm)-tungsten(45nm) bilayers upon annealing at low temperatures (T<1000K) has been investigated using X-ray reflectometry and diffraction. The accompanying changes in macrostress and microstructure have been characterized by applying the X-ray diffraction sin2ψ T method and by qualitative evaluation of the diffraction line broadening, respectively. Annealing causes, besides interdiffusion, changes of macrostress and decrease of microstructural imperfection. Concentration profiles corresponding to diffusion lengths of only a few nanometers were determined by simulation of the measured reflectivity patterns. The values obtained for the diffusion coefficients are compared with corresponding values obtained by extrapolation from published data for bulk materials at much higher temperatures.


1997 ◽  
Vol 505 ◽  
Author(s):  
R. C. Currie ◽  
R. Delhez ◽  
E. J. Mitiemeijer

ABSTRACTThe relaxation of thermally induced strain in 500 nm thick polycrystalline Ag layers electron-beam deposited onto Si wafers was traced during ageing at room temperature. The layers consisted predominantly of matrix crystallites with {111} planes parallel to the surface and twin crystallites with {51 l} planes parallel to the surface. The macrostrain in the plane of the layer was determined from the X-ray diffraction line-profile position and the microstrain from the diffraction-line broadening. The residual macrostress relaxed from 160 MPa to 30 MPa in the matrix crystallites and from 170 MPa to 50 MPa in the twin crystallites. Simultaneously with the decrease in macrostress the microstrain decreases significantly for both texture fractions. The strain relaxation behaviour is governed by movement and subsequent annihilation of defects in the layer.


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