X‐ray double crystal characterization of single crystal epitaxial aluminum nitride thin films on sapphire, silicon carbide and silicon substrates

1995 ◽  
Vol 77 (12) ◽  
pp. 6263-6266 ◽  
Author(s):  
J. Chaudhuri ◽  
R. Thokala ◽  
J. H. Edgar ◽  
B. S. Sywe
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Single Crystal ◽  
Silicon Substrates ◽  
Double Crystal ◽  
X Ray ◽  
Crystal Characterization

Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers

2005 ◽  
Vol 892 ◽  
Author(s):  
Qianghua Wang ◽  
Jianzeng Xu ◽  
Changhe Huang ◽  
Gregory W Auner
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Ultrasonic Transducers ◽  
X Ray Diffraction ◽  
Effective Coupling ◽  
Resonant Frequencies ◽  
X Ray ◽  
Coupling Factors ◽  
Sandwiched Structure

AbstractThis paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.

REALIZATION AND CHARACTERIZATION OF e-BEAM COMPLETELY EVAPORATED BSCCO THIN FILMS

1991 ◽  
Vol 05 (18) ◽  
pp. 1203-1211 ◽  
Author(s):  
C. ATTANASIO ◽  
L. MARITATO ◽  
A. NIGRO ◽  
S. PRISHEPA ◽  
R. SCAFURO
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Single Crystal ◽  
Critical Current ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Reliable Technique ◽  
X Ray ◽  
Eds Analysis

BSCCO thin films with T c (R = 0) higher than 80 K have been routinely prepared using a simple and reliable technique in which we completely electron beam evaporated weighted amounts of bulk pellets. The films were grown on MgO single crystal (100) substrates and showed, after an ex-situ annealing at high temperatures (840–880° C) for several hours, a strong preferential orientation with the c-axis perpendicular to the plane of the substrate. The films were characterized by Θ − 2Θ X-ray diffraction and EDS analysis and by paraconductivity and critical current measurements.

Characterization of Sol-Gel Derived (Pb,Ba)(Zr,Ti,Nb)O3 Thin Films for Optical Waveguide Development

1994 ◽  
Vol 343 ◽  
Author(s):  
P. F. Baude ◽  
J. S. Wright ◽  
C. Ye ◽  
L. F. Francis ◽  
D. L. Polla
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Solution Preparation ◽  
Transmission Measurements ◽  
Gel Technique

ABSTRACT(PbBa)(ZrTiNb)03 thin films and powders have been prepared using the sol-gel technique. Solutions were synthesized in 2-methoxyethanol based upon our previous PZT solution preparation. Three different approaches were used for incorporating barium into PZT alkoxide solutions. Thermal analysis and x-ray diffraction results indicated that barium methoxypropoxide gave the best results. PBZTN (71% Pb and 71% Zr) was deposited onto sapphire substrates as well as oxidized silicon substrates. Optical transmission measurements showed greater than 80% transmission for wavelengths longer than 400 nm. Films with thickness of 3000 Å on sapphire exhibited a refractive index of 2.19 at λ=633 nm.

Stress Measurements in Thin Films Deposited on Single Crystal Substrates Through X-ray Topography Techniques

1976 ◽  
Vol 20 ◽  
pp. 273-281 ◽  
Author(s):  
E. W. Hearn
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Integrated Circuit ◽  
Large Scale ◽  
Silicon Oxide ◽  
Double Crystal ◽  
X Ray ◽  
Quantitative Measurements ◽  
Order Of Magnitude ◽  
Polycrystalline Silicon Films

The application of x-ray topographic techniques to the measurement of stress in thin, films is discussed. Quantitative measurements of stresses in thin films deposited on semiconductor substrates, such as silicon, are also discussed. Double crystal and single crystal techniques are used for such measurements. Both techniques are applied to the measurements of stress in silicon oxide, silicon nitride and polycrystalline silicon films on silicon. The doubly crystal technique is useful for measurements of stresses as low as 109 dynes/cm2 in films only 1000A thick. The single crystal technique is less sensitive by one order of magnitude. The advantage of the single crystal technique is its simplicity and speed. It is useful for large scale measurements as encountered in the manufacture of silicon integrated circuit.

X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1−x/GaAs(001) sandwiched structures

2000 ◽  
Vol 217 (1-2) ◽  
pp. 26-32 ◽  
Author(s):  
Z. Pan ◽  
Y.T. Wang ◽  
L.H. Li ◽  
W. Zhang ◽  
Y.W. Lin ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Double Crystal ◽  
X Ray ◽  
Crystal Characterization

scholarly journals Влияние ориентации кремниевой подложки с буферным подслоем карбида кремния на диэлектрические и полярные свойства пленок нитрида алюминия

2019 ◽  
Vol 61 (12) ◽  
pp. 2379
Author(s):  
О.Н. Сергеева ◽  
А.В. Солнышкин ◽  
Д.А. Киселев ◽  
Т.С. Ильина ◽  
С.А. Кукушкин ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Buffer Layer ◽  
Thin Layers ◽  
Silicon Substrates ◽  
Pyroelectric Effect ◽  
Force Microscopy ◽  
Piezoelectric Force Microscopy ◽  
P Type

The dielectric and polar properties of thin films of aluminum nitride (AlN) epitaxially grown on variously oriented p-type silicon substrates with a buffer sublayer of silicon carbide (SiC), as well as on vicinal planes, are studied. According to the results of studies of the polar properties by two independent methods — the dynamic pyroelectric effect and piezoelectric force microscopy, it was shown that the use of a SiC buffer layer significantly improves the polar properties of thin layers of aluminum nitride.

Physical Characterization of Thin Films of Lithium Niobate Deposited on Silicon Substrates

1990 ◽  
Vol 200 ◽  
Author(s):  
Robert C. Baumann ◽  
Timothy A. Rost ◽  
Thomas A. Rabson
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Depth Profiling ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface Optical ◽  
Auger Electron Spectroscopy Depth ◽  
Deposition Conditions

ABSTRACTThin films (.1-.6 μm) of LiNbO3 have been deposited on silicon substrates by reactive rf sputtering. Under optimized deposition conditions the resulting thin films of LiNbO3 were optically transparent, adhered well to the silicon substrates, and were found to be polycrystalline and uniaxial with the c axis oriented normal to the silicon surface. Optical microscopy and scanning electron microscopy were used to examine film morphology. Both methods indicated that the films were smooth and contained no gross irregularities. The ratio of oxygen to niobium in these films was measured by Rutherford backscattering to be approximately 3 to 1. Auger electron spectroscopy depth profiling revealed that the films had the expected ratio of Li, Nb, and O. This information, together with Bragg x-ray diffraction data, indicates that the thin films deposited on silicon were stoichiometric, crystalline LiNbO3.

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