Activation energy for CoSi and CoSi2formation measured during rapid thermal annealing

1995 ◽  
Vol 77 (2) ◽  
pp. 614-619 ◽  
Author(s):  
E. G. Colgan ◽  
C. Cabral ◽  
D. E. Kotecki
Keyword(s):  
Activation Energy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Activation energy forC94 andC54 TiSi2formation measured during rapid thermal annealing

1994 ◽  
Vol 65 (16) ◽  
pp. 2009-2011 ◽  
Author(s):  
E. G. Colgan ◽  
L. A. Clevenger ◽  
C. Cabral
Keyword(s):  
Activation Energy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Rapid Thermal Annealing of Oxygen-Vacancy Centers In O-Implanted Silicon

1987 ◽  
Vol 92 ◽  
Author(s):  
H. J. Stein
Keyword(s):  
Activation Energy ◽  
Oxygen Vacancy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Infrared Absorption ◽  
Silicon On Insulator ◽  
Vibrational Modes ◽  
Annealing Stage ◽  
Localized Vibrational Modes

ABSTRACTInfrared absorption by localized vibrational modes has been used to investigate rapid thermal annealing (RTA) of oxygen-vacancy (O-V) defects in O-implanted Si. At least three processes are involved in the annealing of O-V defects. An activation energy of 1.0 ± 0.2 eV for a process leading to O-V formation is attributed to O-V diffusion. The final O-V annealing stage is attributed to oxygen clustering around O2-V centers. Processes observed here in RTA are expected to be operative during implantation at the temperatures (400 to 600°C) used for production of silicon-on-insulator structures.

Electrical Activation Behavior of Ion Implanted Silicon in Gallium Arsenide During Rapid Thermal Annealing

1988 ◽  
Vol 144 ◽  
Author(s):  
J.P. de Souza ◽  
D.K. Sadana ◽  
H.J. Hovel
Keyword(s):  
Activation Energy ◽  
Silicon Nitride ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Process ◽  
Electrical Activation ◽  
Maximum Activation ◽  
Surface Decomposition ◽  
Activation Behavior ◽  
Electrical Data

ABSTRACTRapid thermal annealing (RTA) (800–1000°C, 1–60 s) was performed on capless and silicon nitride (SixNy) capped GaAs samples implanted with Si (30 keV, 4.5×1013cm−2 ) and SiF+ (50 keV, 4.5×1013cm−2 ). The maximum activation for the Si+ implants saturated at 25% (capless) and 42% (capped) and that for the SiF+ implants saturated at 20% (capless) and 35% (capped). The activation degraded at temperatures > 825°C due to surface decomposition in the capless annealing case and at > 925°C due to the cap failure in the capped annealing case. For all the RTA conditions studied here, higher activation always occurred with the Si+ rather SiF+ implants. An activation energy of 0.48 eV for the annealing process was determined from the electrical data. It was also observed that the heating and/or cooling rates can significantly influence the electrical activation.

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application
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