Electric field effects in superconducting YBa2Cu3O7−xthin films using field‐effect transistor structures

1995 ◽  
Vol 77 (2) ◽  
pp. 761-764 ◽  
Author(s):  
E. H. Taheri ◽  
J. W. Cochrane ◽  
G. J. Russell
2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.


1977 ◽  
Vol 55 (3) ◽  
pp. 530-535 ◽  
Author(s):  
Robert H. Kohler ◽  
William F. Reynolds

Correlations of cyclopropyl proton chemical shifts for 4-substituted (2,2-dichlorocyclopropyl)-benzenes with σI and σR0 provide evidence that these chemical shifts reflect direct field effects and weak phenyl–cyclopropyl conjugative interactions. Corrections for variable ring current effects due to substituent-induced changes in conformation improve the individual correlations but do not alter the basic pattern of results. Correlation of the β cyclopropyl 1H chemical shift difference with σI with calculated hydrogen electron densities, and with calculated electric field components provides further strong evidence for a field effect on 1H chemical shifts.


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