Current induced degradation in boron‐doped hydrogenated amorphous silicon: A novel investigation technique

1995 ◽  
Vol 77 (3) ◽  
pp. 1133-1136 ◽  
Author(s):  
G. Masini ◽  
G. De Cesare ◽  
F. Palma
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Boron Doped ◽  
Investigation Technique ◽  
Hydrogenated Amorphous

Negative light‐modulation effect of boron‐doped hydrogenated amorphous silicon

1991 ◽  
Vol 59 (4) ◽  
pp. 390-392 ◽  
Author(s):  
Yoshinobu Maeda ◽  
Shigeichi Yamamoto ◽  
Masatoshi Migitaka
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Light Modulation ◽  
Modulation Effect ◽  
Boron Doped ◽  
Hydrogenated Amorphous

Hydrogen Diffusion in Boron-Doped Hydrogenated Amorphous Silicon Films: Crystallization and Induced Structural Changes

2005 ◽  
Vol 864 ◽  
Author(s):  
F. Kail ◽  
A. Hadjadj ◽  
P. Roca i Cabarrocas
Keyword(s):  
Amorphous Silicon ◽  
Structural Changes ◽  
Hydrogen Diffusion ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogen Atoms ◽  
Boron Doped ◽  
Hydrogenated Amorphous ◽  
Positively Charged

AbstractWe have studied the evolution of the structure of boron-doped hydrogenated amorphous silicon films exposed to a hydrogen plasma. From the early stages of exposure, hydrogen diffuses and forms a thick H-rich subsurface. At longer times, hydrogen plasma leads to the formation of a microcrystalline layer via chemical transport without crystallization of the initial layer. We observe that the hydrogen content increases in the films during a plasma exposure and once the microcrystalline layer is formed hydrogen diffuses out of the sample accompanied with a decrease in the boron content. This effect can be attributed to the electric field developed within the heterojunction a-Si:H/μc-Si:H that drives the positively charged hydrogen atoms in the boron-doped layer towards the μc-Si:H layer.

Microstructure Characterization of Hydrogenated Amorphous Silicon Films by Rare Gas Effusion Studies

2001 ◽  
Vol 664 ◽  
Author(s):  
Wolfhard Beyer
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Rare Gas ◽  
Rare Gases ◽  
Boron Doped ◽  
Rare Gas Atoms ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

ABSTRACTThe effusion of the rare gases neon and helium, as well as of hydrogen, was studied for plasma deposited (boron-doped and undoped) hydrogenated amorphous silicon films, grown at various substrate temperatures. Rare gas atoms were incorporated into the material during the growth process or by ion implantation. The results suggest that helium and neon effusion spectra give information on the material microstructure.

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