Structural changes in boron-doped hydrogenated amorphous silicon during long-time annealing below the deposition temperature

1990 ◽  
Vol 42 (8) ◽  
pp. 5388-5390 ◽  
Author(s):  
A. Asano ◽  
M. Stutzmann
Keyword(s):  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Structural Changes ◽  
Hydrogenated Amorphous Silicon ◽  
Boron Doped ◽  
Long Time ◽  
Hydrogenated Amorphous

Hydrogen Diffusion in Boron-Doped Hydrogenated Amorphous Silicon Films: Crystallization and Induced Structural Changes

2005 ◽  
Vol 864 ◽  
Author(s):  
F. Kail ◽  
A. Hadjadj ◽  
P. Roca i Cabarrocas
Keyword(s):  
Amorphous Silicon ◽  
Structural Changes ◽  
Hydrogen Diffusion ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogen Atoms ◽  
Boron Doped ◽  
Hydrogenated Amorphous ◽  
Positively Charged

AbstractWe have studied the evolution of the structure of boron-doped hydrogenated amorphous silicon films exposed to a hydrogen plasma. From the early stages of exposure, hydrogen diffuses and forms a thick H-rich subsurface. At longer times, hydrogen plasma leads to the formation of a microcrystalline layer via chemical transport without crystallization of the initial layer. We observe that the hydrogen content increases in the films during a plasma exposure and once the microcrystalline layer is formed hydrogen diffuses out of the sample accompanied with a decrease in the boron content. This effect can be attributed to the electric field developed within the heterojunction a-Si:H/μc-Si:H that drives the positively charged hydrogen atoms in the boron-doped layer towards the μc-Si:H layer.

Negative light‐modulation effect of boron‐doped hydrogenated amorphous silicon

1991 ◽  
Vol 59 (4) ◽  
pp. 390-392 ◽  
Author(s):  
Yoshinobu Maeda ◽  
Shigeichi Yamamoto ◽  
Masatoshi Migitaka
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Light Modulation ◽  
Modulation Effect ◽  
Boron Doped ◽  
Hydrogenated Amorphous
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