Determination of silicon point defect parameters and reaction barrier energies from gold diffusion experiments

1995 ◽  
Vol 77 (3) ◽  
pp. 1320-1322 ◽  
Author(s):  
K. Ghaderi ◽  
G. Hobler ◽  
M. Budil ◽  
L. Mader ◽  
H. J. Schulze
Keyword(s):  
Point Defect ◽  
Reaction Barrier ◽  
Gold Diffusion

Determination of the energy of electron in a quantum wire with a point defect

2014 ◽  
Vol 49 (2) ◽  
pp. 43-49 ◽  
Author(s):  
D. M. Sedrakian ◽  
D. A. Badalyan ◽  
L. R. Sedrakyan
Keyword(s):  
Point Defect ◽  
Quantum Wire

MIGRATION ENTHALPY OF THERMAL VACANCIES BY POSITRON SPECTROSCOPY

2005 ◽  
Vol 12 (04) ◽  
pp. 493-498
Author(s):  
EMAD A. BADAWI
Keyword(s):  
Point Defect ◽  
Positron Annihilation Lifetime ◽  
Defect Migration ◽  
Positron Spectroscopy ◽  
Vacancy Site ◽  
Al Mg Alloys ◽  
Migration Enthalpy ◽  
Sensitive Method ◽  
Enthalpy Data

The trapping of positrons at vacancy site in some materials provide a new and sensitive method for the equilibrium determination of point defect migration enthalpy. Data are presented for commercial Al–Mg alloys and fitted to a model allowing presentation in the form of Arrhenius plots, hence the migration enthalpy [Formula: see text] can be determined by positron annihilation lifetime technique (PALT). The results show that as the concentration of Mg increases the value of [Formula: see text] increases too.

Determination of impurity–point defect binding energies in alloys

1996 ◽  
Vol 12 (11) ◽  
pp. 904-910 ◽  
Author(s):  
R. G. Faulkner ◽  
S. -H. Song ◽  
P. E. J. Flewitt
Keyword(s):  
Point Defect ◽  
Binding Energies
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