Ge(001) gas‐source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening

1995 ◽  
Vol 77 (4) ◽  
pp. 1504-1513 ◽  
Author(s):  
T. R. Bramblett ◽  
Q. Lu ◽  
N.‐E. Lee ◽  
N. Taylor ◽  
M.‐A. Hasan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Surface Roughening ◽  
Gas Source

Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology

2008 ◽  
Vol 103 (12) ◽  
pp. 123530 ◽  
Author(s):  
B. Cho ◽  
J. Bareño ◽  
Y. L. Foo ◽  
S. Hong ◽  
T. Spila ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Gas Source

Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

1997 ◽  
Vol 392 (1-3) ◽  
pp. L63-L68 ◽  
Author(s):  
G. Glass ◽  
H. Kim ◽  
M.R. Sardela ◽  
Q. Lu ◽  
J.R.A. Carlsson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Film Growth ◽  
Dangling Bond ◽  
Gas Source ◽  
B Doping

Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation

2001 ◽  
Vol 79 (20) ◽  
pp. 3263-3265 ◽  
Author(s):  
H. Kim ◽  
G. Glass ◽  
J. A. N. T. Soares ◽  
Y. L. Foo ◽  
P. Desjardins ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Gas Source

Si(011)16×2 gas-source molecular beam epitaxy: Growth kinetics

2000 ◽  
Vol 76 (20) ◽  
pp. 2853-2855 ◽  
Author(s):  
N. Taylor ◽  
H. Kim ◽  
P. Desjardins ◽  
Y. L. Foo ◽  
J. E. Greene
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Gas Source

Si1−yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: Surface reaction paths and growth kinetics

2003 ◽  
Vol 93 (7) ◽  
pp. 3944-3950 ◽  
Author(s):  
Y. L. Foo ◽  
K. A. Bratland ◽  
B. Cho ◽  
P. Desjardins ◽  
J. E. Greene
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Surface Reaction ◽  
Reaction Paths ◽  
Gas Source

Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

1997 ◽  
Vol 82 (5) ◽  
pp. 2288-2297 ◽  
Author(s):  
H. Kim ◽  
G. Glass ◽  
T. Spila ◽  
N. Taylor ◽  
S. Y. Park ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Film Growth ◽  
Gas Source

Growth kinetics in silane gas-source molecular beam epitaxy

1990 ◽  
Vol 105 (1-4) ◽  
pp. 203-208 ◽  
Author(s):  
Maki Suemitsu ◽  
Fumihiko Hirose ◽  
Yuji Takakuwa ◽  
Nobuo Miyamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Gas Source

Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001)

2002 ◽  
Vol 91 (6) ◽  
pp. 3579-3588 ◽  
Author(s):  
T. Spila ◽  
P. Desjardins ◽  
A. Vailionis ◽  
H. Kim ◽  
N. Taylor ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Roughening ◽  
Gas Source

Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics

2000 ◽  
Vol 88 (12) ◽  
pp. 7067-7078 ◽  
Author(s):  
H. Kim ◽  
G. Glass ◽  
J. A. N. T. Soares ◽  
P. Desjardins ◽  
J. E. Greene
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Film Growth ◽  
Gas Source ◽  
Arsenic Incorporation
Sign in / Sign up

Export Citation Format

Share Document