Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001)
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1987 ◽
Keyword(s):
1994 ◽
Vol 136
(1-4)
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pp. 310-314
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2017 ◽
Vol 477
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pp. 135-138
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2003 ◽
Vol 103
(3)
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pp. 227-232
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