Role of liquid droplet surface diffusion in the vapor‐liquid‐solid whisker growth mechanism

1994 ◽  
Vol 76 (3) ◽  
pp. 1557-1562 ◽  
Author(s):  
Hongyu Wang ◽  
Gary S. Fischman
Keyword(s):  
Surface Diffusion ◽  
Growth Mechanism ◽  
Whisker Growth ◽  
Liquid Droplet ◽  
Droplet Surface ◽  
Vapor Liquid Solid ◽  
Vapor Liquid

VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata
Keyword(s):  
High Pressure ◽  
Growth Condition ◽  
Growth Mechanism ◽  
Quantum Confinement ◽  
Critical Value ◽  
Extended Defects ◽  
Vapor Liquid Solid ◽  
Minimum Diameter ◽  
Vls Growth ◽  
Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

scholarly journals Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1681
Author(s):  
Hadi Hijazi ◽  
Vladimir G. Dubrovskii
Keyword(s):  
Surface Energy ◽  
Continuous Process ◽  
Vapor Liquid Solid ◽  
Gaas Nanowires ◽  
Monolayer Growth ◽  
Surface Energetics ◽  
Monolayer Expansion ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.

SHAPE EVOLUTION IN ONE-DIMENSIONAL ZnO NANOSTRUCTURES GROWN FROM ZnO NANOPOWDER SOURCE: VAPOR–LIQUID–SOLID VERSUS VAPOR–SOLID GROWTH MECHANISMS

2011 ◽  
Vol 10 (01n02) ◽  
pp. 75-79 ◽  
Author(s):  
SOUMEN DHARA ◽  
P. K. GIRI
Keyword(s):  
Growth Mechanism ◽  
Growth Temperature ◽  
Shape Evolution ◽  
Zno Nanostructures ◽  
Growth Mechanisms ◽  
Vapor Liquid Solid ◽  
One Dimensional ◽  
Zno Nanopowder ◽  
Simultaneous Growth ◽  
Vapor Liquid

Here we report on the growth and evolution of ZnO nanowires grown from ZnO nanopowder as a source material using a horizontal muffle furnace. The shape evolution has been studied with variation in growth temperature and zinc vapor pressure. The structural analysis on these nanostructures shows c-axis oriented aligned growth. Scanning electron microscopy imaging of these nanostructures revealed the shape evolution from nanowires to nanoribbons and then to nanorods as the growth temperature increases from 650°C to 870°C. At 650°C, only vertical nanowires have been observed and with increase in growth temperature nanowires transform to nanoribbons and then to nanorods at 870°C. And we also observed simultaneous growth of nanorods and nanoribbons under a specific growth condition. We believe that these nanowires and nanorods were formed by vapor–liquid–solid growth mechanism (catalyst-mediated growth), whereas nanoribbons were grown by vapor–solid growth mechanism (without the aid of a metal catalyst). We observed simultaneous occurrence of vapor–liquid–solid and vapor–solid growth mechanisms at a particular growth temperature. These ZnO nanowires exhibit bound exciton related UV emission at ~379 nm, and defect-emission band in the visible region. Possible growth mechanism, shape evolution, and simultaneous growth of two types of one-dimensional ZnO nanostructures under the same growth condition are discussed.

Essential role of catalyst in vapor-liquid-solid growth of compounds

2011 ◽  
Vol 83 (6) ◽  
Author(s):  
Masaru Suzuki ◽  
Yoshiki Hidaka ◽  
Takeshi Yanagida ◽  
Annop Klamchuen ◽  
Masaki Kanai ◽  
...  
Keyword(s):  
Essential Role ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Vapor-Liquid-Solid-Solid Growth Mechanism of Carbon Micro-coils

2006 ◽  
Vol 22 (06) ◽  
pp. 768-770
Author(s):  
LI Wen-Jun ◽  
◽  
◽  
XU Hai-Tao ◽  
GUO Yan-Chuan ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Vapor Liquid Solid ◽  
Vapor Liquid

Study on in-Situ Preparation and Growth Mechanism of TiCxN1-x Whiskers

2011 ◽  
Vol 197-198 ◽  
pp. 617-622
Author(s):  
Xue Wen Chong ◽  
Chuan Zhen Huang ◽  
Liang Xu ◽  
Bin Zou ◽  
Han Lian Liu ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Carbothermal Reduction ◽  
Reduction Process ◽  
Vapor Liquid Solid ◽  
Mixed Powder ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

TiCxN1-x whiskers were prepared using TiO2 and carbon mixed powder as the starting powder at the atmosphere of nitrogen by the carbothermal reduction process. NaCl and NiCl2 were added into the starting powder as the cosolvent and growth adds of impurities, respectively. An effect of the content of TiO2 and carbon in the starting powder on the TiCxN1-x whiskers was investigated. It is found from SEM and XRD observations that three types of TiCx N1-x whiskers are obtained when the different mol ratios of C and Ti are applied. The growth of whiskers is not only urged by the droplet on the top of whiskers, but also initiated by the helical dislocations. The growth of TiCxN1-x whiskers is controlled by the vapor-liquid-solid mechanism as well as vapor-solid mechanism.

Self-Catalysed Vapor-Liquid-Solid Growth Mechanism of ZnO Nanowires Grown on Silicon Substrate Pre-Coated with ZnO Buffer Layer

2020 ◽  
Vol 307 ◽  
pp. 64-69
Author(s):  
Naziha Jamaludin ◽  
Samsudi Sakrani ◽  
Kashif Tufail Chaudhary ◽  
Jalil Ali ◽  
Fairuz Diyana Ismail
Keyword(s):  
Electron Microscopy ◽  
Buffer Layer ◽  
Growth Mechanism ◽  
Silicon Substrate ◽  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Zno Buffer Layer ◽  
Vapor Liquid

The present article reports the growth mechanism of zinc oxide (ZnO) nanowires grown on silicon substrate pre-coated with ZnO buffer layer by thermal evaporation method. ZnO nanowires are grown for different growth time of 0, 30, 90 and 120 mins with controlled supply of Ar and O2 gas at 650 °C. The structural, morphological and crystallinity properties of ZnO nanowires are analyzed by field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) spectroscopy, high resolution transmission electron microscopy (HRTEM), and X-ray diffraction (XRD). FESEM images infers that, the nanowires growth is driven by self-catalysed vapor-liquid-solid mechanism, where the buffer layer serve as nucleation site. EDX spectra show the uniform composition and purity of ZnO nanowires. A strong (002) peak is detected in XRD spectra which indicates that the preferred growth orientation of the nanowires is toward the c-axis with a hexagonal wurtzite structure. The HRTEM microscopic graphs confirm the growth of nanowire along the preferred [0001] axis. Based on the analysis of grown ZnO nanowires, the probable growth mechanism is schematically presented.

The Role of Surface Diffusion in the Growth Mechanism of Triosephosphate Isomerase Crystals

2008 ◽  
Vol 8 (4) ◽  
pp. 1173-1180 ◽  
Author(s):  
Mike Sleutel ◽  
Celine Vanhee ◽  
Cécile Van de Weerdt ◽  
Klaas Decanniere ◽  
Dominique Maes ◽  
...  
Keyword(s):  
Surface Diffusion ◽  
Growth Mechanism ◽  
Triosephosphate Isomerase
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