The Role of Surface Diffusion in the Growth Mechanism of Triosephosphate Isomerase Crystals

2008 ◽  
Vol 8 (4) ◽  
pp. 1173-1180 ◽  
Author(s):  
Mike Sleutel ◽  
Celine Vanhee ◽  
Cécile Van de Weerdt ◽  
Klaas Decanniere ◽  
Dominique Maes ◽  
...  
Keyword(s):  
Surface Diffusion ◽  
Growth Mechanism ◽  
Triosephosphate Isomerase

scholarly journals The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

2020 ◽  
Vol 32 (8) ◽  
pp. 085606
Author(s):  
Bruno Daudin ◽  
Alexandra-Madalina Siladie ◽  
Marion Gruart ◽  
Martien den Hertog ◽  
Catherine Bougerol ◽  
...  
Keyword(s):  
Surface Diffusion ◽  
Growth Mechanism

Chemical Availability of Bromide Dictates CsPbBr3 Nanocrystal Growth

2019 ◽  
Author(s):  
Je-Ruei Wen ◽  
Benjamin Roman ◽  
Freddy Rodriguez Ortiz ◽  
Noel Mireles Villegas ◽  
Nicholas Porcellino ◽  
...  
Keyword(s):  
Reaction Time ◽  
Growth Mechanism ◽  
Chemical Control ◽  
Critical Role ◽  
Phase Evolution ◽  
Detailed Understanding ◽  
Semiconductor Nanocrystal ◽  
Nanocrystal Growth ◽  
Chemical Availability

Lack of detailed understanding of the growth mechanism of CsPbBr3 nanocrystals has hindered sophisticated morphological and chemical control of this important emerging optoelectronic material. Here, we have elucidated the growth mechanism by slowing the reaction kinetics. When 1-bromohexane is used as an alternative halide source, bromide is slowly released into the reaction mixture, extending the reaction time from ~3 seconds to greater than 20 minutes. This enables us to monitor the phase evolution of products over the course of reaction, revealing that CsBr is the initial species formed, followed by Cs4PbBr6, and finally CsPbBr3. Further, formation of monodisperse CsBr nanocrystals is demonstrated in a bromide-deficient and lead-abundant solution. The CsBr can only be transformed into CsPbBr3 nanocubes if additional bromide is added. Our results indicate a fundamentally different growth mechanism for CsPbBr3 in comparison with more established semiconductor nanocrystal systems and reveal the critical role of the chemical availability of bromide for the growth reactions.<br>

scholarly journals On the role of surface diffusion in determining the shape or morphology of noble-metal nanocrystals

2013 ◽  
Vol 110 (17) ◽  
pp. 6669-6673 ◽  
Author(s):  
X. Xia ◽  
S. Xie ◽  
M. Liu ◽  
H.-C. Peng ◽  
N. Lu ◽  
...  
Keyword(s):  
Surface Diffusion ◽  
Noble Metal ◽  
Metal Nanocrystals

The Role of Electrostatic Interactions in Protease Surface Diffusion and the Consequence for Interfacial Biocatalysis

Langmuir ◽  
2010 ◽  
Vol 26 (24) ◽  
pp. 18916-18925 ◽  
Author(s):  
Bob E. Feller ◽  
James T. Kellis ◽  
Luis G. Cascão-Pereira ◽  
Channing R. Robertson ◽  
Curtis W. Frank
Keyword(s):  
Surface Diffusion ◽  
Electrostatic Interactions

On the Role of Surface Diffusion in Stress Relaxation During Electromigration

1995 ◽  
Vol 391 ◽  
Author(s):  
L.M. Klinger ◽  
L. Levin ◽  
E.E. Glickman
Keyword(s):  
Stress Relaxation ◽  
Surface Diffusion ◽  
Hydrostatic Stress ◽  
Stress Gradient ◽  
Film Surface ◽  
Diffusional Creep ◽  
Atomic Diffusion ◽  
Material Transport ◽  
Diffusional Flux

AbstractWe report on the role of surface diffusion involved in relaxation of electromigration (EM) induced compressive stresses in relation to hillock growth and EM behavior of interconnects. Two competing mechanisms of EM stress relaxation by material transport onto the surface are considered. The first is hillocking by threshold diffusional creep (TCH), with rather large blocks of material (grains or group of grains) involved in plastic flow. The second mechanism, atomic diffusion hillocking (ADH), is presumed to be a nonthreshold one, and represents atomic grain boundary (GB) diffusion stimulated by the hydrostatic stress gradient in the direction normal to the film surface. The latter process involves surface diffusion because GB diffusional flux onto the surface must be coupled with the flux of redistribution of the atoms over the surface. If ADH acts rapidly, this should prevent the build-up of the matter at the down-wind (anode) end of the stripe, and thus, eliminate the Blech EM threshold resulting from the stress-gradient along the stripe. The question as to whether GB diffusion capable of transporting atoms pushed by electron wind along the stripe is also effective in relieving compressive stress by GB migration of the surplus atoms in the normal direction, has remained open up to now. The problem is especially acute for short or/and narrow lines separated into short polycrystalline segments, where the Blech threshold effects are critical to EM reliability.We derived the main features of the EM behavior in drift velocity test geometry assuming that both TCH and ADH are operative. The result can be compared with available and future experimental observations in order to reveal if and when the ADH mechanism with surface diffusion involved works.

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