Detailed balance limit of the efficiency of multilevel intermediate band solar cells

2011 ◽  
Vol 98 (17) ◽  
pp. 171108 ◽  
Author(s):  
Tomohiro Nozawa ◽  
Yasuhiko Arakawa
2011 ◽  
Vol 20 (9) ◽  
pp. 097103 ◽  
Author(s):  
Quan Cao ◽  
Zhi-Hua Ma ◽  
Chun-Lai Xue ◽  
Yu-Hua Zuo ◽  
Qi-Ming Wang

Energies ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 6021
Author(s):  
Jongwon Lee

It is necessary to devise innovative techniques to design new high-performance tandem solar cells to meet increasing energy needs. In this study, the theoretical efficiency of intermediate band solar cells (IBSCs) was increased by integrating them with tandem solar cells to produce intermediate band tandem solar cells (IBTSCs). The spectral splitting analysis indicated that the efficient absorption of sub-photon energies was necessary to ensure optimal performance of the IBSCs at each junction of the IBTSC. For this calculation, we assumed all absorption of sub-photon energies are unity. In addition, we applied the variation of absorptivity to the detailed balance limit of a double-junction (DJ) IBTSC. Furthermore, we included the impact of series and shunt resistances of a typical DJ IBTSC to investigate the variations in electrical parameters (short circuit current, open circuit voltage). The performance efficiency also depended on the illumination concentration due to the charge carrier transitions at each junction. We analyzed this aspect to determine the overall performance of the IBTSCs. We replaced the IBSC in the bottom junction with a single-junction solar cell to explore the potential of diverse tandem configurations. DJ IBTSCs achieved a limiting efficiency comparable to that of six-junction solar cells, despite the lower number of junctions. It was challenging for these cells to exhibit optimal performance because of the inefficient spectrum management in the bottom junction. It was concluded that full illumination concentration was required to achieve optimal performance in both junctions of the IBTSC.


2011 ◽  
Vol 19 (18) ◽  
pp. 16927 ◽  
Author(s):  
Chien-chung Lin ◽  
Wei-Ling Liu ◽  
Ching-Yu Shih

2018 ◽  
Vol 74 (1) ◽  
pp. 51-58 ◽  
Author(s):  
Zahra Arefinia

AbstractFor the first time, the formalism of intrinsic loss processes such as below-band gap, thermalisation, angle mismatch, Carnot and emission loss in the intermediate band solar cells (SCs) is obtained by a theoretical framework based on the principle of detailed balance approach, and with the physical origins of losses discussed in terms of photon absorption and emission in the presence of intermediate energy band (IB). Then, the effect of IB position on each intrinsic loss in the intermediate band SCs is investigated. The results show that the introduction of IB reduces the below-band gap loss due to absorption of low energy photons by narrower sub-band gap and reduces the thermalisation loss due to absorption of high energy photons by the band gap of host semiconductor. Furthermore, the thermalisation and angle mismatch losses are dominant fractions of intrinsic loss, while the emission loss presents less than 2.2 % of intrinsic loss.


Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 344
Author(s):  
Yasushi Shoji ◽  
Ryo Tamaki ◽  
Yoshitaka Okada

From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current generation via two-step optical excitations through the intermediate band is the key to the operating principle. This mechanism requires the formation of a strong quantum confinement structure. Therefore, we focused on the material system with GaSb quantum nanostructures embedded in AlGaAs layers. However, studies involving crystal growth of GaSb quantum nanostructures on AlGaAs layers have rarely been reported. In our work, we fabricated GaSb quantum dots (QDs) and quantum rings (QRs) on AlGaAs layers via molecular-beam epitaxy. Using the Stranski–Krastanov growth mode, we demonstrated that lens-shaped GaSb QDs can be fabricated on AlGaAs layers. In addition, atomic force microscopy measurements revealed that GaSb QDs could be changed to QRs under irradiation with an As molecular beam even when they were deposited onto AlGaAs layers. We also investigated the suitability of GaSb/AlGaAs QDSCs and QRSCs for use in IBSCs by evaluating the temperature characteristics of their external quantum efficiency. For the GaSb/AlGaAs material system, the QDSC was found to have slightly better two-step optical excitation temperature characteristics than the QRSC.


2015 ◽  
Vol 141 ◽  
pp. 322-330 ◽  
Author(s):  
Mohammadreza Nematollahi ◽  
Xiaodong Yang ◽  
Lars Martin Sandvik Aas ◽  
Zahra Ghadyani ◽  
Morten Kildemo ◽  
...  

2011 ◽  
Vol 20 (6) ◽  
pp. 625-629 ◽  
Author(s):  
Björn Marsen ◽  
Sascha Klemz ◽  
Thomas Unold ◽  
Hans-Werner Schock

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